Bringing High-Performance GaInNAsSb/GaAs SOAs to True Data Applications

We experimentally demonstrate the high-speed data processing capabilities of a GaInNAsSb semiconductor optical amplifier operating at 1.55 μm. The investigated structure exhibits good thermal characteristics and fast gain dynamics with 10%-90% recovery time of 55 ps. Successful wavelength conversion...

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Bibliographic Details
Published in:IEEE photonics technology letters 2015-08, Vol.27 (16), p.1691-1694
Main Authors: Giannoulis, Giannis, Korpijarvi, Ville-Markus, Iliadis, Nikos, Makela, Jaakko, Viheriala, Jukka, Apostolopoulos, Dimitrios, Guina, Mircea, Avramopoulos, Hercules
Format: Article
Language:English
Subjects:
Bit error rate
Dilute Nitrides
Gain
Gallium arsenide
Optical signal processing
Optical wavelength conversion
Photonic Integration
Semiconductor Optical Amplifier (SOA)
Semiconductor optical amplifiers
Temperature measurement
Wavelength Conversion
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Summary:We experimentally demonstrate the high-speed data processing capabilities of a GaInNAsSb semiconductor optical amplifier operating at 1.55 μm. The investigated structure exhibits good thermal characteristics and fast gain dynamics with 10%-90% recovery time of 55 ps. Successful wavelength conversion of 10-Gb/s signals is reported. A maximum power penalty of
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2015.2436697