Dry Etched Waveguide Laser Diode on GeOI

We demonstrate a top-top contact, dry etched mirror facet III-V waveguide laser diode grown on germanium-on-insulator (GeOI). A 3 × InGaAs/GaAs quantum well designed to lase at 985 nm was grown on a GaAs buffer, which was lattice matched to the GeOI platform in order to realize the monolithic integr...

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Bibliographic Details
Published in:IEEE journal of selected topics in quantum electronics 2015-11, Vol.21 (6), p.264-269
Main Authors: Shuh-Ying Lee, Kian Hua Tan, Wan Khai Loke, Wicaksono, S., Daosheng Li, Harper, Robert, Soon-Fatt Yoon
Format: Article
Language:English
Subjects:
Devices
Diodes
Drying
Electronics
Etching
Gallium arsenide
optical device fabrication
Photonics
quantum well lasers
Semiconductor growth
Semiconductor lasers
Silicon
Substrates
Waveguide lasers
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Summary:We demonstrate a top-top contact, dry etched mirror facet III-V waveguide laser diode grown on germanium-on-insulator (GeOI). A 3 × InGaAs/GaAs quantum well designed to lase at 985 nm was grown on a GaAs buffer, which was lattice matched to the GeOI platform in order to realize the monolithic integration of III-V electronic and photonic devices with silicon and SiO 2 . Lasing occurred at ~ 985 nm with a threshold current density of ~ 2 kA/cm 2 . Pulsed measurements, and SEM and TEM characterization methods were used. The issue of heat transfer limited the performance of the laser.
ISSN:1077-260X
1558-4542
DOI:10.1109/JSTQE.2015.2432022