Quantitative Chemical Mapping of InGaN Quantum Wells from Calibrated High-Angle Annular Dark Field Micrographs

We present a simple and robust method to acquire quantitative maps of compositional fluctuations in nanostructures from low magnification high-angle annular dark field (HAADF) micrographs calibrated by energy-dispersive X-ray (EDX) spectroscopy in scanning transmission electron microscopy (STEM) mod...

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Published in:Microscopy and microanalysis 2015-08, Vol.21 (4), p.994-1005
Main Authors: Carvalho, Daniel, Morales, Francisco M., Ben, Teresa, García, Rafael, Redondo-Cubero, Andrés, Alves, Eduardo, Lorenz, Katharina, Edwards, Paul R., O’Donnell, Kevin P., Wetzel, Christian
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Language:English
Subjects:
Electrons
Fluctuations
Materials Applications and Techniques
Scientific imaging
Sensors
Transmission electron microscopy
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cited_by cdi_FETCH-LOGICAL-c486t-76477bc6fa4683fa043c9f10caeb7f2c9132a05cabab9905867f11e119837f7d3
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container_title Microscopy and microanalysis
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creator Carvalho, Daniel
Morales, Francisco M.
Ben, Teresa
García, Rafael
Redondo-Cubero, Andrés
Alves, Eduardo
Lorenz, Katharina
Edwards, Paul R.
O’Donnell, Kevin P.
Wetzel, Christian
description We present a simple and robust method to acquire quantitative maps of compositional fluctuations in nanostructures from low magnification high-angle annular dark field (HAADF) micrographs calibrated by energy-dispersive X-ray (EDX) spectroscopy in scanning transmission electron microscopy (STEM) mode. We show that a nonuniform background in HAADF-STEM micrographs can be eliminated, to a first approximation, by use of a suitable analytic function. The uncertainty in probe position when collecting an EDX spectrum renders the calibration of HAADF-STEM micrographs indirect, and a statistical approach has been developed to determine the position with confidence. Our analysis procedure, presented in a flowchart to facilitate the successful implementation of the method by users, was applied to discontinuous InGaN/GaN quantum wells in order to obtain quantitative determinations of compositional fluctuations on the nanoscale.
doi_str_mv 10.1017/S143192761501301X
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source Cambridge University Press
subjects Electrons
Fluctuations
Materials Applications and Techniques
Scientific imaging
Sensors
Transmission electron microscopy
title Quantitative Chemical Mapping of InGaN Quantum Wells from Calibrated High-Angle Annular Dark Field Micrographs
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