In Situ Synchrotron X-ray Diffraction Measurement of the Strain Distribution in Si Die for the Embedded Substrates

• Published in: Journal of electronic materials 2015-10, Vol.44 (10), p.3942-3947
• Main Authors: Hsu, Hsueh Hsien, Chen, Hao, Ouyang, Yao Tsung, Chiu, Tz Cheng, Chang, Tao Chih, Lee, Hsin Yi, Ku, Chin Shun, Wu, Albert T.
• Format: Article
• Language: English
• Subjects: 3-D technology; Characterization and Evaluation of Materials; Chemistry and Materials Science; Electronics and Microelectronics; Instrumentation; Integrated circuits; Materials Science; Optical and Electronic Materials; Solid State Physics; X-rays
• ISSN: 0361-5235; 1543-186X
• DOI: 10.1007/s11664-015-3780-y

Three-dimensional packaging provides an acceptable solution for miniaturized integrated circuits. Because of the technological flexibility required for combining various modules to form a functional system, miniaturization can be achieved by using embedded techniques that could enhance the reliability of assembled systems. Because the mismatch of the thermal expansion coefficient among the materials has been an emerging issue when embedded components are subjected to thermal cycles, this study adopted the in situ synchrotron x-ray method to measure the strain distribution of a Si die in embedded substrates at various temperatures ranging from 25°C to 150°C. The out-of-plane strain of the Si die became less compressive when the temperature was increased. The numerical simulation of the finite elements software ANSYS also indicated the similar consequence of the strain behavior.