Peculiarities of photosensitivity of n(GaAs)–p(GaAs)1–x–y(ZnSe)x(Ge2)y structures with quantum dots

The spectral photosensitivity of n (GaAs)- p (GaAs) 1– x – y (ZnSe) x (Ge 2 ) y heterostructures in the photon energy range from 1.1 to 2.7 eV is studied. The peak sensitivity of the structure was found for a photon energy 2.62 eV, due to the impurity levels of ZnSe lying in the valence band of the...

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Bibliographic Details
Published in:Applied solar energy 2015-07, Vol.51 (3), p.206-208
Main Authors: Saidov, A. S., Zainabidinov, S. Z., Kalanov, M. U., Boboev, A. Y., Kutlimurotov, B. R.
Format: Article
Language:English
Subjects:
Atoms & subatomic particles
Electrical Machines and Networks
Electrons
Engineering
Heliotechnical Materials Science
Photoreceptors
Power Electronics
Quantum dots
Solar energy
Solid solutions
Spectrum analysis
Studies
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Summary:The spectral photosensitivity of n (GaAs)- p (GaAs) 1– x – y (ZnSe) x (Ge 2 ) y heterostructures in the photon energy range from 1.1 to 2.7 eV is studied. The peak sensitivity of the structure was found for a photon energy 2.62 eV, due to the impurity levels of ZnSe lying in the valence band of the solid solution.
ISSN:0003-701X
1934-9424
DOI:10.3103/S0003701X15030111