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Peculiarities of photosensitivity of n(GaAs)–p(GaAs)1–x–y(ZnSe)x(Ge2)y structures with quantum dots
The spectral photosensitivity of n (GaAs)- p (GaAs) 1– x – y (ZnSe) x (Ge 2 ) y heterostructures in the photon energy range from 1.1 to 2.7 eV is studied. The peak sensitivity of the structure was found for a photon energy 2.62 eV, due to the impurity levels of ZnSe lying in the valence band of the...
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Published in: | Applied solar energy 2015-07, Vol.51 (3), p.206-208 |
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container_issue | 3 |
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container_title | Applied solar energy |
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creator | Saidov, A. S. Zainabidinov, S. Z. Kalanov, M. U. Boboev, A. Y. Kutlimurotov, B. R. |
description | The spectral photosensitivity of
n
(GaAs)-
p
(GaAs)
1–
x
–
y
(ZnSe)
x
(Ge
2
)
y
heterostructures in the photon energy range from 1.1 to 2.7 eV is studied. The peak sensitivity of the structure was found for a photon energy 2.62 eV, due to the impurity levels of ZnSe lying in the valence band of the solid solution. |
doi_str_mv | 10.3103/S0003701X15030111 |
format | article |
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x
–
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(ZnSe)
x
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heterostructures in the photon energy range from 1.1 to 2.7 eV is studied. The peak sensitivity of the structure was found for a photon energy 2.62 eV, due to the impurity levels of ZnSe lying in the valence band of the solid solution.</description><identifier>ISSN: 0003-701X</identifier><identifier>EISSN: 1934-9424</identifier><identifier>DOI: 10.3103/S0003701X15030111</identifier><language>eng</language><publisher>New York: Allerton Press</publisher><subject>Atoms & subatomic particles ; Electrical Machines and Networks ; Electrons ; Engineering ; Heliotechnical Materials Science ; Photoreceptors ; Power Electronics ; Quantum dots ; Solar energy ; Solid solutions ; Spectrum analysis ; Studies</subject><ispartof>Applied solar energy, 2015-07, Vol.51 (3), p.206-208</ispartof><rights>Allerton Press, Inc. 2015</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c2311-78a55e877a3c7aa14ac762454d82f65046670d3b70036356146d2b8486e805d33</citedby><cites>FETCH-LOGICAL-c2311-78a55e877a3c7aa14ac762454d82f65046670d3b70036356146d2b8486e805d33</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.proquest.com/docview/1722696054?pq-origsite=primo$$EHTML$$P50$$Gproquest$$H</linktohtml><link.rule.ids>314,780,784,11688,27924,27925,36060,44363</link.rule.ids></links><search><creatorcontrib>Saidov, A. S.</creatorcontrib><creatorcontrib>Zainabidinov, S. Z.</creatorcontrib><creatorcontrib>Kalanov, M. U.</creatorcontrib><creatorcontrib>Boboev, A. Y.</creatorcontrib><creatorcontrib>Kutlimurotov, B. R.</creatorcontrib><title>Peculiarities of photosensitivity of n(GaAs)–p(GaAs)1–x–y(ZnSe)x(Ge2)y structures with quantum dots</title><title>Applied solar energy</title><addtitle>Appl. Sol. Energy</addtitle><description>The spectral photosensitivity of
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n
(GaAs)-
p
(GaAs)
1–
x
–
y
(ZnSe)
x
(Ge
2
)
y
heterostructures in the photon energy range from 1.1 to 2.7 eV is studied. The peak sensitivity of the structure was found for a photon energy 2.62 eV, due to the impurity levels of ZnSe lying in the valence band of the solid solution.</abstract><cop>New York</cop><pub>Allerton Press</pub><doi>10.3103/S0003701X15030111</doi><tpages>3</tpages></addata></record> |
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subjects | Atoms & subatomic particles Electrical Machines and Networks Electrons Engineering Heliotechnical Materials Science Photoreceptors Power Electronics Quantum dots Solar energy Solid solutions Spectrum analysis Studies |
title | Peculiarities of photosensitivity of n(GaAs)–p(GaAs)1–x–y(ZnSe)x(Ge2)y structures with quantum dots |
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