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Peculiarities of photosensitivity of n(GaAs)–p(GaAs)1–x–y(ZnSe)x(Ge2)y structures with quantum dots

The spectral photosensitivity of n (GaAs)- p (GaAs) 1– x – y (ZnSe) x (Ge 2 ) y heterostructures in the photon energy range from 1.1 to 2.7 eV is studied. The peak sensitivity of the structure was found for a photon energy 2.62 eV, due to the impurity levels of ZnSe lying in the valence band of the...

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Published in:Applied solar energy 2015-07, Vol.51 (3), p.206-208
Main Authors: Saidov, A. S., Zainabidinov, S. Z., Kalanov, M. U., Boboev, A. Y., Kutlimurotov, B. R.
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description The spectral photosensitivity of n (GaAs)- p (GaAs) 1– x – y (ZnSe) x (Ge 2 ) y heterostructures in the photon energy range from 1.1 to 2.7 eV is studied. The peak sensitivity of the structure was found for a photon energy 2.62 eV, due to the impurity levels of ZnSe lying in the valence band of the solid solution.
doi_str_mv 10.3103/S0003701X15030111
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subjects Atoms & subatomic particles
Electrical Machines and Networks
Electrons
Engineering
Heliotechnical Materials Science
Photoreceptors
Power Electronics
Quantum dots
Solar energy
Solid solutions
Spectrum analysis
Studies
title Peculiarities of photosensitivity of n(GaAs)–p(GaAs)1–x–y(ZnSe)x(Ge2)y structures with quantum dots
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