Chemical Vapor Deposition of High-Quality and Atomically Layered ReS2

• Published in: Small (Weinheim an der Bergstrasse, Germany) Germany), 2015-10, Vol.11 (40), p.5423-5429
• Main Authors: He, Xuexia, Liu, Fucai, Hu, Peng, Fu, Wei, Wang, Xingli, Zeng, Qingsheng, Zhao, Wu, Liu, Zheng
• Format: Article
• Language: English
• Subjects: 2D materials; anisotropy; Chemical vapor deposition; field effect transistors; Microscopy; Nanotechnology; Quality; rhenium disulphide; Semiconductors
• ISSN: 1613-6810; 1613-6829
• DOI: 10.1002/smll.201501488

Recently, anisotropic 2D materials, such as black phosphorus and rhenium disulfides (ReS2), have attracted a lot attention because of their unique applications on electronics and optoelectronics. In this work, the direct growth of high‐quality ReS2 atomic layers and nanoribbons has been demonstrated by using chemical vapor deposition (CVD) method. A possible growth mechanism is proposed according to the controlled experiments. The CVD ReS2‐based filed‐effect transistors (FETs) show n‐type semiconducting behavior with a current on/off ratio of ≈106 and a charge carrier mobility of ≈9.3 cm2 Vs−1. These results suggested that the quality of CVD grown ReS2 is comparable to mechanically exfoliated ReS2, which is also further supported by atomic force microscopy imaging, high‐resolution transmission electron microscopy imaging and thickness‐dependent Raman spectra. The study here indicates that CVD grown ReS2 may pave the way for the large‐scale fabrication of ReS2‐based high‐performance optoelectronic devices, such as anisotropic FETs and polarization detection. ReS2 has attracted a lot of interest due to structure anisotropy and weak interlayer coupling. Atomically thin ReS2 is synthesized by chemical vapor deposition. The field‐effect transistor based on few‐layer ReS2 shows n‐type behavior with a mobility of 9 cm2 V s–1 and an on/off ratio of 106. The results demonstrated here open up new ways for the larger scale application of 2D materials for anisotropic opotoelectric devices.