High-Density FinFET One-Time Programmable Memory Cell With Intra-Fin-Cell-Isolation Technology

The one-time programmable (OTP) cell with intra-Fin-cell-isolation (IFCI) on the FinFET high-k metal gate (HKMG) CMOS process is proposed and demonstrated. The field-enhanced dielectric breakdown at Fin corners enables this OTP cell to be operated at low program voltage with fast program speed. The...

Full description

Saved in:
Bibliographic Details
Published in:IEEE electron device letters 2015-10, Vol.36 (10), p.1037-1039
Main Authors: Peng, Ping Chun, Chen, Yu-Zheng, Hsiao, Woan Yun, Chen, Kuang-Hsin, Lin, Ching-Pin, Tien, Bor-Zen, Chang, Tzong-Sheng, Lin, Chrong Jung, King, Ya-Chin
Format: Article
Language:English
Subjects:
Anti-fuse OTP
CMOS integrated circuits
Computer architecture
FinFET
FinFETs
Logic gates
logic NVM
Microprocessors
Nonvolatile memory
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The one-time programmable (OTP) cell with intra-Fin-cell-isolation (IFCI) on the FinFET high-k metal gate (HKMG) CMOS process is proposed and demonstrated. The field-enhanced dielectric breakdown at Fin corners enables this OTP cell to be operated at low program voltage with fast program speed. The new intra-Fin cell-to-cell isolation eliminates the required wide spacing in the conventional isolation schemes, which successfully shields the neighboring cells from program and read disturbs. Without introducing extra masks or process steps, the CMOS compatible IFCI OTP cell achieves an ultrasmall cell size of 0.076 μm 2 . More than six orders of ON-/OFF-read window is achieved under 4 V programming within 20 μs.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2015.2472300