High-Density FinFET One-Time Programmable Memory Cell With Intra-Fin-Cell-Isolation Technology

The one-time programmable (OTP) cell with intra-Fin-cell-isolation (IFCI) on the FinFET high-k metal gate (HKMG) CMOS process is proposed and demonstrated. The field-enhanced dielectric breakdown at Fin corners enables this OTP cell to be operated at low program voltage with fast program speed. The...

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Published in:IEEE electron device letters 2015-10, Vol.36 (10), p.1037-1039
Main Authors: Peng, Ping Chun, Chen, Yu-Zheng, Hsiao, Woan Yun, Chen, Kuang-Hsin, Lin, Ching-Pin, Tien, Bor-Zen, Chang, Tzong-Sheng, Lin, Chrong Jung, King, Ya-Chin
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Language:English
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Anti-fuse OTP
CMOS integrated circuits
Computer architecture
FinFET
FinFETs
Logic gates
logic NVM
Microprocessors
Nonvolatile memory
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cited_by cdi_FETCH-LOGICAL-c291t-add164d2a0ff0f1f8f22e37eef4a853374a659035ea15513983564d8161f7df13
cites cdi_FETCH-LOGICAL-c291t-add164d2a0ff0f1f8f22e37eef4a853374a659035ea15513983564d8161f7df13
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container_issue 10
container_start_page 1037
container_title IEEE electron device letters
container_volume 36
creator Peng, Ping Chun
Chen, Yu-Zheng
Hsiao, Woan Yun
Chen, Kuang-Hsin
Lin, Ching-Pin
Tien, Bor-Zen
Chang, Tzong-Sheng
Lin, Chrong Jung
King, Ya-Chin
description The one-time programmable (OTP) cell with intra-Fin-cell-isolation (IFCI) on the FinFET high-k metal gate (HKMG) CMOS process is proposed and demonstrated. The field-enhanced dielectric breakdown at Fin corners enables this OTP cell to be operated at low program voltage with fast program speed. The new intra-Fin cell-to-cell isolation eliminates the required wide spacing in the conventional isolation schemes, which successfully shields the neighboring cells from program and read disturbs. Without introducing extra masks or process steps, the CMOS compatible IFCI OTP cell achieves an ultrasmall cell size of 0.076 μm 2 . More than six orders of ON-/OFF-read window is achieved under 4 V programming within 20 μs.
doi_str_mv 10.1109/LED.2015.2472300
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subjects Anti-fuse OTP
CMOS integrated circuits
Computer architecture
FinFET
FinFETs
Logic gates
logic NVM
Microprocessors
Nonvolatile memory
title High-Density FinFET One-Time Programmable Memory Cell With Intra-Fin-Cell-Isolation Technology
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