Role of Transport During Transient Phenomena in AlGaN/GaN Heterostructure FETs

Transient phenomena in AlGaN/GaN heterostructure field-effect transistors are attributed to trapping and detrapping of electrons from deep localized states, and the measured activation energies are conventionally associated with the electron capture and emission processes. This standard interpretati...

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Bibliographic Details
Published in:IEEE electron device letters 2015-11, Vol.36 (11), p.1124-1127
Main Authors: Mehari, Shlomo, Calahorra, Yonatan, Gavrilov, Arkady, Eizenberg, Moshe, Ritter, Dan
Format: Article
Language:English
Subjects:
Activation energy
Aluminum gallium nitride
Aluminum gallium nitrides
Field effect transistors
Gallium nitride
Gallium nitrides
GaN
Hall effect
HEMTs
heterostructure field effect transistors (HFETs)
Heterostructures
Logic gates
MODFETs
Semiconductor devices
Transient analysis
transients
Transport
Trapping
Wide band gap semiconductors
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Summary:Transient phenomena in AlGaN/GaN heterostructure field-effect transistors are attributed to trapping and detrapping of electrons from deep localized states, and the measured activation energies are conventionally associated with the electron capture and emission processes. This standard interpretation ignores, however, transport between the two-dimensional electron gas and the trap. Using gated van der Pauw structures, we demonstrate that the transient behavior is determined by transport (at least for the trapping process). The measured activation energy is, therefore, a characteristic of the transport process rather than the emission-capture processes.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2015.2476959