An Associative Memory Device Using a Magnetic Tunnel Junction

We propose an associative memory device performing a nondeclarative characteristic, whose memory is recalled by association with independent experiences after a learning event is made. In this paper, the current-induced switching characteristics of a magnetic tunnel junction implement the concept of...

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Bibliographic Details
Published in:IEEE transactions on magnetics 2015-11, Vol.51 (11), p.1-4
Main Authors: Suh, Dong Ik, Kil, Joon Pyo, Choi, Yeonhoi, Bae, Gi Yoon, Park, Wanjun
Format: Article
Language:English
Subjects:
Associative memory
Circuits
Data storage
Integrated circuits
Junctions
Learning
Magnetic tunnel junction
Magnetic tunneling
Magnetism
Magnetoresistance
Magnetoresistivity
Memory devices
Neuromorphic engineering
Neurons
Resistance
Spin-transfer torque
Switches
Tunnel junctions
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Summary:We propose an associative memory device performing a nondeclarative characteristic, whose memory is recalled by association with independent experiences after a learning event is made. In this paper, the current-induced switching characteristics of a magnetic tunnel junction implement the concept of classical conditioning. This association in memory through the learning process is electrically perceived by means of resistance changes due to the magnetoresistance effect before and after the stimulus for association is accompanied by learning. It has been confirmed that the functionality of the proposed memory device completely presents the Pavlovian type of learning with a simple circuital scheme.
ISSN:0018-9464
1941-0069
DOI:10.1109/TMAG.2015.2444413