High-Performance Electrolyte-Insulator-Semiconductor pH Sensors Using High-[Formula Omitted] CeO2 Sensing Films

In this letter, we developed a high-performance electrolyte-insulator-semiconductor (EIS) sensor using a high-[Formula Omitted] CeO2 sensing membrane, which was deposited on a Si substrate through sputtering. We used X-ray diffraction and X-ray photoelectron spectroscopy to study the structural prop...

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Bibliographic Details
Published in:IEEE electron device letters 2015-11, Vol.36 (11), p.1195
Main Authors: Pan, Tung-Ming, Wang, Chih-Wei, Pan, Sheng-Yu
Format: Article
Language:English
Online Access:Get full text
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Summary:In this letter, we developed a high-performance electrolyte-insulator-semiconductor (EIS) sensor using a high-[Formula Omitted] CeO2 sensing membrane, which was deposited on a Si substrate through sputtering. We used X-ray diffraction and X-ray photoelectron spectroscopy to study the structural properties of these films that were annealed at various temperatures. The CeO2 EIS sensor annealed at 900 °C exhibited a higher sensitivity of 64.8 mV/pH, lower hysteresis voltage of 1 mV, and smaller drift rate of 0.78 mV/h compared with other annealing temperatures, presumably suggesting the formation of a well-crystallized CeO2 film featuring a high dielectric constant and having a high fraction of Ce3+.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2015.2475627