Investigation of Self-Heating Effect on Hot Carrier Degradation in Multiple-Fin SOI FinFETs

In this letter, the impact of self-heating effect (SHE) on hot carrier degradation (HCD) in multiple-fin silicon-on-insulator (SOI) FinFETs was investigated. First, the ac conductance method has been utilized to extract the thermal resistance (Rth) of SOI FinFETs with different fin numbers. Then, bo...

Full description

Saved in:
Bibliographic Details
Published in:IEEE electron device letters 2015-12, Vol.36 (12), p.1258-1260
Main Authors: Jiang, Hai, Liu, Xiaoyan, Xu, Nuo, He, Yandong, Du, Gang, Zhang, Xing
Format: Article
Language:English
Subjects:
Degradation
FinFETs
hot carrier degradation (HCD)
Hot carriers
Reliability
self-heating effect (SHE)
Silicon-on-insulator
silicon-on-insulator (SOI)
Thermal resistance
thermal resistance (Rth)
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In this letter, the impact of self-heating effect (SHE) on hot carrier degradation (HCD) in multiple-fin silicon-on-insulator (SOI) FinFETs was investigated. First, the ac conductance method has been utilized to extract the thermal resistance (Rth) of SOI FinFETs with different fin numbers. Then, both dc and ac stresses are applied on the gate and drain of transistors with the source grounded to characterize the HCD. It is found that the device with large fin number demonstrates high-temperature rise caused by SHE, which results in the enhanced generation of oxide bulk trapped charges. Thus, the SHE aggravates the HCD significantly. The influence of SHE on HCD is mitigated when the frequency of ac stress is above 10 MHz. Therefore, special attention to the SHE on HCD must be paid for accurate HCD prediction in FinFETs.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2015.2487045