Consistent Modeling and Power Gain Analysis of Microwave SiGe HBTs in CE and CB Configurations

This paper presents a methodology to model SiGe HBTs biased in common-emitter and in common-base configurations including the bias-dependent substrate parasitics, which allows determining the more suitable configuration to achieve maximum power gain at different frequency ranges. Model-experiment co...

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Bibliographic Details
Published in:IEEE transactions on microwave theory and techniques 2015-12, Vol.63 (12), p.3888-3895
Main Authors: Alvarez-Botero, German, Torres-Torres, Reydezel, Murphy-Arteaga, Roberto S.
Format: Article
Language:English
Subjects:
Capacitance
CB configuration
CE configuration
equivalent circuit modeling
Heterojunction bipolar transistors
Integrated circuit modeling
Mathematical model
Microwave theory and techniques
power gain
SiGe-HBT
Silicon germanium
substrate parasitics determination
Substrates
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Summary:This paper presents a methodology to model SiGe HBTs biased in common-emitter and in common-base configurations including the bias-dependent substrate parasitics, which allows determining the more suitable configuration to achieve maximum power gain at different frequency ranges. Model-experiment correlations up to 100 GHz for different bias conditions verify the validity of the proposed circuit representations using the same values for the parameters in both configurations.
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.2015.2496375