Interrupted PROGRAM and ERASE Operations for Characterizing Radiation Effects in Commercial NAND Flash Memories

A technique of interrupting PROGRAM and ERASE operations is used to extract information about the analog characteristics of commercial NAND Flash memory cells. The number of interrupted PROGRAM or ERASE operations required to cause a bit to change state is shown to be modified by program/erase stres...

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Published in:IEEE transactions on nuclear science 2015-12, Vol.62 (6), p.2390-2397
Main Authors: Roach, Austin H., Gadlage, Matthew J., Duncan, Adam R., Ingalls, James D., Kay, Matthew J.
Format: Article
Language:English
Subjects:
Flash memories
Floating gate memory
interrupted erase
interrupted program
NAND flash
oxide stress
partial erase
partial program
Radiation effects
TID
trapped charge
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cited_by cdi_FETCH-LOGICAL-c291t-4078b10772a8e839d74808a129085f244b4b38b7a369b9d92302d4a98e9b9abd3
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creator Roach, Austin H.
Gadlage, Matthew J.
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Kay, Matthew J.
description A technique of interrupting PROGRAM and ERASE operations is used to extract information about the analog characteristics of commercial NAND Flash memory cells. The number of interrupted PROGRAM or ERASE operations required to cause a bit to change state is shown to be modified by program/erase stress, total ionizing dose, and heavy ion exposure. These modifications allow for the detection of stresses far below the thresholds for memory cell failure.
doi_str_mv 10.1109/TNS.2015.2490019
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source IEEE Electronic Library (IEL) Journals
subjects Flash memories
Floating gate memory
interrupted erase
interrupted program
NAND flash
oxide stress
partial erase
partial program
Radiation effects
TID
trapped charge
title Interrupted PROGRAM and ERASE Operations for Characterizing Radiation Effects in Commercial NAND Flash Memories
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