Sensitive Volume and Extreme Shifts in Floating Gate Cells Irradiated with Heavy Ions

Floating gate cells in 45-nm NOR Flash memories were exposed to highly energetic heavy ions and large irradiation angles. We focused on extreme events, that is the cells with the lowest threshold voltage after irradiation. We discuss the impact of large exposure angles and the shape of the sensitive...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2015-12, Vol.62 (6), p.2815-2821
Main Authors: Bagatin, Marta, Gerardin, Simone, Paccagnella, Alessandro, Visconti, Angelo, Bonanomi, Mauro, Chiavarone, Luca, Calabrese, Marcello, Ferlet-Cavrois, Veronique
Format: Article
Language:English
Subjects:
Flash memories
floating gate (FG) devices
Ions
Irradiation
Radiation effects
single event effects
Threshold voltage
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Summary:Floating gate cells in 45-nm NOR Flash memories were exposed to highly energetic heavy ions and large irradiation angles. We focused on extreme events, that is the cells with the lowest threshold voltage after irradiation. We discuss the impact of large exposure angles and the shape of the sensitive volume, comparing them with previous-generation devices. We study and model the average and extreme values of threshold voltages, through a combination of experimental measurements and extreme distribution theory, and make an evaluation of worst-case scenarios.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2015.2498403