Reduced-temperature solution-processed transparent oxide low-voltage-operable field-effect transistors

Metal oxide-based transistors can be fabricated by low-cost, large-area solution processing methods, but involve a trade-off between low processing temperature, facile charge transport and high-capacitance/low-voltage transistor gates. We achieve these simultaneously by fabricating zinc oxide and so...

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Bibliographic Details
Published in:MRS communications 2015-12, Vol.5 (4), p.605-611
Main Authors: Liu, Yu, McElhinny, Kyle, Alley, Olivia, Evans, Paul G., Katz, Howard E.
Format: Article
Language:English
Subjects:
Biomaterials
Characterization and Evaluation of Materials
Materials Engineering
Materials Science
Nanotechnology
Polymer Sciences
Research Letters
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Summary:Metal oxide-based transistors can be fabricated by low-cost, large-area solution processing methods, but involve a trade-off between low processing temperature, facile charge transport and high-capacitance/low-voltage transistor gates. We achieve these simultaneously by fabricating zinc oxide and sodium-incorporated alumina (SA) thin films with temperature not exceeding 200 to 250 °C using aqueous and combustion precursors, respectively. X-ray reflectivity shows a compositionally distinct SA boundary layer forming near the substrate and that a portion of the SA is chemically removed during the subsequent semiconductor deposition. Improved etch resistance and reduced dielectric leakage was obtained when (3-glycidoxypropyl) trimethoxysilane was included in the SA precursor.
ISSN:2159-6859
2159-6867
DOI:10.1557/mrc.2015.79