Reduced-temperature solution-processed transparent oxide low-voltage-operable field-effect transistors

Metal oxide-based transistors can be fabricated by low-cost, large-area solution processing methods, but involve a trade-off between low processing temperature, facile charge transport and high-capacitance/low-voltage transistor gates. We achieve these simultaneously by fabricating zinc oxide and so...

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Published in:MRS communications 2015-12, Vol.5 (4), p.605-611
Main Authors: Liu, Yu, McElhinny, Kyle, Alley, Olivia, Evans, Paul G., Katz, Howard E.
Format: Article
Language:English
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Biomaterials
Characterization and Evaluation of Materials
Materials Engineering
Materials Science
Nanotechnology
Polymer Sciences
Research Letters
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cited_by cdi_FETCH-LOGICAL-c336t-1cf574fe4c162508172fec6cf093514a362b088a737e939dfdfd8fa89cc5e2023
cites cdi_FETCH-LOGICAL-c336t-1cf574fe4c162508172fec6cf093514a362b088a737e939dfdfd8fa89cc5e2023
container_end_page 611
container_issue 4
container_start_page 605
container_title MRS communications
container_volume 5
creator Liu, Yu
McElhinny, Kyle
Alley, Olivia
Evans, Paul G.
Katz, Howard E.
description Metal oxide-based transistors can be fabricated by low-cost, large-area solution processing methods, but involve a trade-off between low processing temperature, facile charge transport and high-capacitance/low-voltage transistor gates. We achieve these simultaneously by fabricating zinc oxide and sodium-incorporated alumina (SA) thin films with temperature not exceeding 200 to 250 °C using aqueous and combustion precursors, respectively. X-ray reflectivity shows a compositionally distinct SA boundary layer forming near the substrate and that a portion of the SA is chemically removed during the subsequent semiconductor deposition. Improved etch resistance and reduced dielectric leakage was obtained when (3-glycidoxypropyl) trimethoxysilane was included in the SA precursor.
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fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_1751297876</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><cupid>10_1557_mrc_2015_79</cupid><sourcerecordid>3903388571</sourcerecordid><originalsourceid>FETCH-LOGICAL-c336t-1cf574fe4c162508172fec6cf093514a362b088a737e939dfdfd8fa89cc5e2023</originalsourceid><addsrcrecordid>eNp9kE1LAzEQhoMoWGpP_oEFj5qaZJtkc5TiFxQE0XNIs5OyZXdTk6wf_96ULeJBnDnMHJ73neFF6JySOeVcXnfBzhmhfC7VEZowyhUWlZDHPztXp2gW45bk4oJJySfIPUM9WKhxgm4HwaQhQBF9O6TG93gXvIUYoS5SMH3cmQB9KvxnU0PR-g_87ttkNoD9XrpuoXANtDUG58CmUdPE5EM8QyfOtBFmhzlFr3e3L8sHvHq6f1zerLAtS5EwtY7LhYOFpYJxUlHJspOwjqiS04UpBVuTqjKylKBKVbvclTOVspYDI6ycoovRN3_-NkBMeuuH0OeTmkpOmZKVFJm6HCkbfIwBnN6FpjPhS1Oi91nqnKXeZ6mlyvTVSMdM9RsIvzz_xPHB3HTr0NQb-J__Bm1Yh4I</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1751297876</pqid></control><display><type>article</type><title>Reduced-temperature solution-processed transparent oxide low-voltage-operable field-effect transistors</title><source>Springer Link</source><creator>Liu, Yu ; McElhinny, Kyle ; Alley, Olivia ; Evans, Paul G. ; Katz, Howard E.</creator><creatorcontrib>Liu, Yu ; McElhinny, Kyle ; Alley, Olivia ; Evans, Paul G. ; Katz, Howard E.</creatorcontrib><description>Metal oxide-based transistors can be fabricated by low-cost, large-area solution processing methods, but involve a trade-off between low processing temperature, facile charge transport and high-capacitance/low-voltage transistor gates. We achieve these simultaneously by fabricating zinc oxide and sodium-incorporated alumina (SA) thin films with temperature not exceeding 200 to 250 °C using aqueous and combustion precursors, respectively. X-ray reflectivity shows a compositionally distinct SA boundary layer forming near the substrate and that a portion of the SA is chemically removed during the subsequent semiconductor deposition. Improved etch resistance and reduced dielectric leakage was obtained when (3-glycidoxypropyl) trimethoxysilane was included in the SA precursor.</description><identifier>ISSN: 2159-6859</identifier><identifier>EISSN: 2159-6867</identifier><identifier>DOI: 10.1557/mrc.2015.79</identifier><language>eng</language><publisher>New York, USA: Cambridge University Press</publisher><subject>Biomaterials ; Characterization and Evaluation of Materials ; Materials Engineering ; Materials Science ; Nanotechnology ; Polymer Sciences ; Research Letters</subject><ispartof>MRS communications, 2015-12, Vol.5 (4), p.605-611</ispartof><rights>Copyright © Materials Research Society 2015</rights><rights>The Materials Research Society 2015</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c336t-1cf574fe4c162508172fec6cf093514a362b088a737e939dfdfd8fa89cc5e2023</citedby><cites>FETCH-LOGICAL-c336t-1cf574fe4c162508172fec6cf093514a362b088a737e939dfdfd8fa89cc5e2023</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Liu, Yu</creatorcontrib><creatorcontrib>McElhinny, Kyle</creatorcontrib><creatorcontrib>Alley, Olivia</creatorcontrib><creatorcontrib>Evans, Paul G.</creatorcontrib><creatorcontrib>Katz, Howard E.</creatorcontrib><title>Reduced-temperature solution-processed transparent oxide low-voltage-operable field-effect transistors</title><title>MRS communications</title><addtitle>MRS Communications</addtitle><addtitle>MRC</addtitle><description>Metal oxide-based transistors can be fabricated by low-cost, large-area solution processing methods, but involve a trade-off between low processing temperature, facile charge transport and high-capacitance/low-voltage transistor gates. We achieve these simultaneously by fabricating zinc oxide and sodium-incorporated alumina (SA) thin films with temperature not exceeding 200 to 250 °C using aqueous and combustion precursors, respectively. X-ray reflectivity shows a compositionally distinct SA boundary layer forming near the substrate and that a portion of the SA is chemically removed during the subsequent semiconductor deposition. Improved etch resistance and reduced dielectric leakage was obtained when (3-glycidoxypropyl) trimethoxysilane was included in the SA precursor.</description><subject>Biomaterials</subject><subject>Characterization and Evaluation of Materials</subject><subject>Materials Engineering</subject><subject>Materials Science</subject><subject>Nanotechnology</subject><subject>Polymer Sciences</subject><subject>Research Letters</subject><issn>2159-6859</issn><issn>2159-6867</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNp9kE1LAzEQhoMoWGpP_oEFj5qaZJtkc5TiFxQE0XNIs5OyZXdTk6wf_96ULeJBnDnMHJ73neFF6JySOeVcXnfBzhmhfC7VEZowyhUWlZDHPztXp2gW45bk4oJJySfIPUM9WKhxgm4HwaQhQBF9O6TG93gXvIUYoS5SMH3cmQB9KvxnU0PR-g_87ttkNoD9XrpuoXANtDUG58CmUdPE5EM8QyfOtBFmhzlFr3e3L8sHvHq6f1zerLAtS5EwtY7LhYOFpYJxUlHJspOwjqiS04UpBVuTqjKylKBKVbvclTOVspYDI6ycoovRN3_-NkBMeuuH0OeTmkpOmZKVFJm6HCkbfIwBnN6FpjPhS1Oi91nqnKXeZ6mlyvTVSMdM9RsIvzz_xPHB3HTr0NQb-J__Bm1Yh4I</recordid><startdate>20151201</startdate><enddate>20151201</enddate><creator>Liu, Yu</creator><creator>McElhinny, Kyle</creator><creator>Alley, Olivia</creator><creator>Evans, Paul G.</creator><creator>Katz, Howard E.</creator><general>Cambridge University Press</general><general>Springer International Publishing</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8AO</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>S0W</scope></search><sort><creationdate>20151201</creationdate><title>Reduced-temperature solution-processed transparent oxide low-voltage-operable field-effect transistors</title><author>Liu, Yu ; McElhinny, Kyle ; Alley, Olivia ; Evans, Paul G. ; Katz, Howard E.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c336t-1cf574fe4c162508172fec6cf093514a362b088a737e939dfdfd8fa89cc5e2023</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Biomaterials</topic><topic>Characterization and Evaluation of Materials</topic><topic>Materials Engineering</topic><topic>Materials Science</topic><topic>Nanotechnology</topic><topic>Polymer Sciences</topic><topic>Research Letters</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Liu, Yu</creatorcontrib><creatorcontrib>McElhinny, Kyle</creatorcontrib><creatorcontrib>Alley, Olivia</creatorcontrib><creatorcontrib>Evans, Paul G.</creatorcontrib><creatorcontrib>Katz, Howard E.</creatorcontrib><collection>CrossRef</collection><collection>ProQuest Pharma Collection</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science &amp; Engineering Collection</collection><collection>ProQuest Central</collection><collection>AUTh Library subscriptions: ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central</collection><collection>SciTech Premium Collection</collection><collection>Materials Science Database</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>DELNET Engineering &amp; Technology Collection</collection><jtitle>MRS communications</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Liu, Yu</au><au>McElhinny, Kyle</au><au>Alley, Olivia</au><au>Evans, Paul G.</au><au>Katz, Howard E.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Reduced-temperature solution-processed transparent oxide low-voltage-operable field-effect transistors</atitle><jtitle>MRS communications</jtitle><stitle>MRS Communications</stitle><addtitle>MRC</addtitle><date>2015-12-01</date><risdate>2015</risdate><volume>5</volume><issue>4</issue><spage>605</spage><epage>611</epage><pages>605-611</pages><issn>2159-6859</issn><eissn>2159-6867</eissn><abstract>Metal oxide-based transistors can be fabricated by low-cost, large-area solution processing methods, but involve a trade-off between low processing temperature, facile charge transport and high-capacitance/low-voltage transistor gates. We achieve these simultaneously by fabricating zinc oxide and sodium-incorporated alumina (SA) thin films with temperature not exceeding 200 to 250 °C using aqueous and combustion precursors, respectively. X-ray reflectivity shows a compositionally distinct SA boundary layer forming near the substrate and that a portion of the SA is chemically removed during the subsequent semiconductor deposition. Improved etch resistance and reduced dielectric leakage was obtained when (3-glycidoxypropyl) trimethoxysilane was included in the SA precursor.</abstract><cop>New York, USA</cop><pub>Cambridge University Press</pub><doi>10.1557/mrc.2015.79</doi><tpages>7</tpages></addata></record>
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subjects Biomaterials
Characterization and Evaluation of Materials
Materials Engineering
Materials Science
Nanotechnology
Polymer Sciences
Research Letters
title Reduced-temperature solution-processed transparent oxide low-voltage-operable field-effect transistors
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-05T22%3A56%3A35IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Reduced-temperature%20solution-processed%20transparent%20oxide%20low-voltage-operable%20field-effect%20transistors&rft.jtitle=MRS%20communications&rft.au=Liu,%20Yu&rft.date=2015-12-01&rft.volume=5&rft.issue=4&rft.spage=605&rft.epage=611&rft.pages=605-611&rft.issn=2159-6859&rft.eissn=2159-6867&rft_id=info:doi/10.1557/mrc.2015.79&rft_dat=%3Cproquest_cross%3E3903388571%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c336t-1cf574fe4c162508172fec6cf093514a362b088a737e939dfdfd8fa89cc5e2023%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=1751297876&rft_id=info:pmid/&rft_cupid=10_1557_mrc_2015_79&rfr_iscdi=true