Fabrication of 8K4K organic EL panel using high-mobility IGZO material

A 13.3‐inch 8k4k organic light‐emitting diode display based on a newly developed high‐mobility indium–gallium–zinc–oxide material was fabricated. It was found that the use of a higher‐mobility material decreases the scan driver size and power consumption. Furthermore, such oxide semiconductor layers...

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Bibliographic Details
Published in:Journal of the Society for Information Display 2015-12, Vol.23 (12), p.561-569
Main Authors: Okazaki, Kenichi, Shima, Yukinori, Kurosaki, Daisuke, Miyake, Hiroyuki, Koezuka, Junichi, Kawashima, Susumu, Shiokawa, Masataka, Shishido, Hideaki, Yamazaki, Shunpei
Format: Article
Language:English
Subjects:
8K4K
CAAC-IGZO
high mobility
OLED display
Organic light emitting diodes
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Summary:A 13.3‐inch 8k4k organic light‐emitting diode display based on a newly developed high‐mobility indium–gallium–zinc–oxide material was fabricated. It was found that the use of a higher‐mobility material decreases the scan driver size and power consumption. Furthermore, such oxide semiconductor layers with a buried channel structure can increase process stability and reliability. A 13.3‐inch 8k4k organic light‐emitting diode display based on a newly developed high‐mobility indium‐gallium‐zinc‐oxide material was fabricated. The high‐mobility material was obtained by optimizing the composition. It was found that the use of the higher‐mobility material decreases the scan driver size and power consumption. Furthermore, such oxide semiconductor layers with a buried channel structure can increase process stability and reliability.
ISSN:1071-0922
1938-3657
DOI:10.1002/jsid.396