Growth of high quality CH^sub 3^NH3PbI^sub 3^ thin films prepared by modified dual-source vapor evaporation

In this work, a high quality CH^sub 3^NH3PbI^sub 3^ thin film prepared by modified dual-source vapor evaporation was proposed. An ultra-thin PbI^sub 2^ layer was deposited firstly, and then CH^sub 3^NH3I and PbI^sub 2^ were evaporated simultaneously to form CH^sub 3^NH3PbI^sub 3^ thin film. The resu...

Full description

Saved in:
Bibliographic Details
Published in:Journal of materials science. Materials in electronics 2016-03, Vol.27 (3), p.2321
Main Authors: Fan, Ping, Gu, Di, Liang, Guang-xing, Chen, Ju-long, Luo, Jing-ting, Xie, Yi-zhu, Zheng, Zhuang-hao, Zhang, Dong-ping
Format: Article
Language:English
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In this work, a high quality CH^sub 3^NH3PbI^sub 3^ thin film prepared by modified dual-source vapor evaporation was proposed. An ultra-thin PbI^sub 2^ layer was deposited firstly, and then CH^sub 3^NH3I and PbI^sub 2^ were evaporated simultaneously to form CH^sub 3^NH3PbI^sub 3^ thin film. The results show that flat, uniform, smooth, less porous and good crystallinity perovskite thin films without impure phase are formed by the modified dual-source vapor evaporation. The ratios of Pb/I accord with the nominal MAPbI^sub 3^ stoichiometry and the band gaps are about 1.60 eV close to the theoretical value of 1.55 eV. The properties of CH^sub 3^NH3PbI^sub 3^ thin film fabricated by this method are suitable for perovskite solar cells applications.
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-015-4028-6