SiC Thin Film Growth on Different Substrates using Pulsed Nd^sup 3+^:YAG Laser Deposition

Synthesis of SiC thin film on different substrates, namely crystalline silicon substrate and a-cut sapphire substrate is studied using a Q-switched pulsed Nd3+:YAG laser. The morphological and structural properties of SiC layers on the substrates were investigated by scanning electronic microscopy (...

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Bibliographic Details
Published in:Journal of laser micro nanoengineering 2016-02, Vol.11 (1), p.71
Main Authors: Paneerselvam, Emmanuel, Vasa, Nilesh J, Rao, M S Ramachandra
Format: Article
Language:English
Online Access:Get full text
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Summary:Synthesis of SiC thin film on different substrates, namely crystalline silicon substrate and a-cut sapphire substrate is studied using a Q-switched pulsed Nd3+:YAG laser. The morphological and structural properties of SiC layers on the substrates were investigated by scanning electronic microscopy (SEM), X-ray diffraction (XRD) and Raman spectroscopy. The results shows polycrystalline (combined 3C-SiC and 4H-SiC) nature of SiC films on Si(100) substrates and a-cut sapphire substrates, respectively. The droplet formation on the deposited film was reduced significantly by selecting the grit count of SiC powder 500 and the pressure of 2×10^sup -2^ Pa for thin film grown on Si(100) substrate and grit count of SiC powder 800 and the pressure of 2×10^sup -3^ Pa for thin film grown on sapphire substrate respectively. n-Si/SiC heterostructures exhibit diode characteristics: current-voltage measurements showed a typical rectifying characteristic of a p-n junction.
ISSN:1880-0688
DOI:10.2961/jlmn.2016.01.0013