Rapid Formation of Ternary CdZnSe2 Chalcogenide Thin Film by Microwave Assisted Chemical Bath Deposition

• Published in: Macromolecular symposia. 2016-04, Vol.362 (1), p.60-64
• Main Authors: Bagade, Chaitali S., Ghanwat, Vishvanath B., Kharade, Suvarta D., Khot, Kishorkumar V., Kharade, Rohini R., Desai, Neha D., Bhosale, Popatrao N.
• Format: Article
• Language: English
• Subjects: CdZnSe2 thin films; effect of complexing agent; Metals; microwave-assisted chemical bath deposition; n-type conductivity; nanocrystalline; Thin films
• ISSN: 1022-1360; 1521-3900
• DOI: 10.1002/masy.201400252

Summary Nanostructured ternary cadmium zinc selenide (CZS) thin films have been deposited by a rapid and reliable Microwave assisted chemical bath deposition (MA‐CBD) method by using ethylenediaminetetraacetic acid (EDTA) and triethanolamine (TEA) as complexing agents. Optical, structural, morphological, compositional and electrical properties of CZS thin films have been investigated as a function of different complexing agents. Band gap energy of CZS thin films obtained for EDTA and TEA was 2.03 and 1.75 eV respectively. X‐ray diffraction (XRD) studies revealed that films were nanocrystalline in nature with mixed phase structure, in which cubic phase of CdSe dominant over hexagonal ZnSe. The scanning electron microscopy (SEM) images show porous surface morphology with distinct grains over the substrate surface. The EDS spectra show presence of Cd, Zn and Se elements. Thermoelectric power (TEP) measurement shows films were n‐type semiconducting in nature. Synthesized thin films shows potential for solar cell application.