Mechanical and electrical switching of local ferroelectric domains of K^sub 0.5^Bi^sub 4.5^Ti^sub 4^O^sub 15^ film

Ferroelectric/Piezoelectric K^sub 0.5^Bi^sub 4.5^Ti^sub 4^O^sub 15^ (KBT) film was fabricated by pulsed laser deposition method and confirmed by ferroelectric, dielectric measurements and local butterfly-type piezoresponse hysteresis loops. Importantly, ferroelectric domain switching by both electri...

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Bibliographic Details
Published in:Journal of materials science. Materials in electronics 2016-06, Vol.27 (6), p.5613
Main Authors: Zhao, Hongyang, Cai, Kang, Cheng, Zhenxiang, Ma, Zhibin, Kimura, Hideo, Jia, Tingting
Format: Article
Language:English
Subjects:
Ferroelectrics
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Summary:Ferroelectric/Piezoelectric K^sub 0.5^Bi^sub 4.5^Ti^sub 4^O^sub 15^ (KBT) film was fabricated by pulsed laser deposition method and confirmed by ferroelectric, dielectric measurements and local butterfly-type piezoresponse hysteresis loops. Importantly, ferroelectric domain switching by both electrical field and mechanical force in KBT film was demonstrated. The dark and bright contrast represents the PFM response of the up and down polarized domains, which can be written by a dc bias of ±12 V or a mechanical force of 40-50 nN. The successful demonstration of mechanical force switching of ferroelectric domain in KBT film other than electric field provides a novel mean for information storage and sensors.
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-016-4467-8