Effect of Polarization Coulomb Field Scattering on Parasitic Source Access Resistance and Extrinsic Transconductance in AlGaN/GaN Heterostructure FETs

With the measured parasitic source access resistance under a different forward gate-source current for the AlGaN/GaN heterostructure FETs (HFETs) with different device sizes, the variation of the measured parasitic source access resistance with the polarization charge distribution at the AlGaN/GaN i...

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Published in:IEEE transactions on electron devices 2016-04, Vol.63 (4), p.1471-1477
Main Authors: Yang, Ming, Lin, Zhaojun, Zhao, Jingtao, Cui, Peng, Fu, Chen, Lv, Yuanjie, Feng, Zhihong
Format: Article
Language:English
Subjects:
AlGaN/GaN heterostructure FETs (HFETs)
Aluminum gallium nitride
extrinsic transconductance
HEMTs
Logic gates
MODFETs
parasitic source access resistance
polarization Coulomb field (PCF) scattering
Resistance
Scattering
Wide band gap semiconductors
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cited_by cdi_FETCH-LOGICAL-c291t-3d0c5de7a60f1a501b2c35fda24789572dd8e9ebae9db212aacb1540dfd90d803
cites cdi_FETCH-LOGICAL-c291t-3d0c5de7a60f1a501b2c35fda24789572dd8e9ebae9db212aacb1540dfd90d803
container_end_page 1477
container_issue 4
container_start_page 1471
container_title IEEE transactions on electron devices
container_volume 63
creator Yang, Ming
Lin, Zhaojun
Zhao, Jingtao
Cui, Peng
Fu, Chen
Lv, Yuanjie
Feng, Zhihong
description With the measured parasitic source access resistance under a different forward gate-source current for the AlGaN/GaN heterostructure FETs (HFETs) with different device sizes, the variation of the measured parasitic source access resistance with the polarization charge distribution at the AlGaN/GaN interface was compared and analyzed. It is found that the variation of the parasitic source access resistance originates from the polarization Coulomb field (PCF) scattering, and the effect of PCF scattering on the parasitic source access resistance is more significant for the device with a longer gate length or a shorter gate-source distance. The behaviors of the measured extrinsic transconductance for the fabricated AlGaN/GaN HFETs confirm the effect of PCF scattering. The possibility is demonstrated to take advantage of this effect to improve the performance of AlGaN/GaN HFETs.
doi_str_mv 10.1109/TED.2016.2532919
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subjects AlGaN/GaN heterostructure FETs (HFETs)
Aluminum gallium nitride
extrinsic transconductance
HEMTs
Logic gates
MODFETs
parasitic source access resistance
polarization Coulomb field (PCF) scattering
Resistance
Scattering
Wide band gap semiconductors
title Effect of Polarization Coulomb Field Scattering on Parasitic Source Access Resistance and Extrinsic Transconductance in AlGaN/GaN Heterostructure FETs
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