Investigation of AlGaN/GaN Ion-Sensitive Heterostructure Field-Effect Transistors-Based pH Sensors With Al2O3 Surface Passivation and Sensing Membrane

This paper demonstrates an AlGaN/GaN ion-sensitive heterostructure field-effect transistors (ISHFETs)-based pH sensors with an aluminum oxide (Al 2 O 3 ) to serve as a passivation layer and a sensing membrane at the same time. Al 2 O 3 was deposited by the ultrasonic spray pyrolysis deposition (USPD...

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Bibliographic Details
Published in:IEEE sensors journal 2016-05, Vol.16 (10), p.3514-3522
Main Authors: Han-Yin Liu, Wei-Chou Hsu, Wei-Fan Chen, Chih-Wei Lin, Yi-Ying Li, Ching-Sung Lee, Wen-Ching Sun, Sung-Yen Wei, Sheng-Min Yu
Format: Article
Language:English
Subjects:
AlGaN/GaN
Aluminum gallium nitride
Aluminum oxide
Aluminum oxide (Al2O3)
HEMTs
ion-sensitive heterostructure field-effect transistor (ISHFET)
MODFETs
Passivation
pH sensor
Sensors
ultrasonic spray pyrolysis deposition (USPD)
Wide band gap semiconductors
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Summary:This paper demonstrates an AlGaN/GaN ion-sensitive heterostructure field-effect transistors (ISHFETs)-based pH sensors with an aluminum oxide (Al 2 O 3 ) to serve as a passivation layer and a sensing membrane at the same time. Al 2 O 3 was deposited by the ultrasonic spray pyrolysis deposition (USPD) method. It was found that the ISHFET with Al 2 O 3 showed a higher pH sensitivity of 55.6 mV/pH, a faster response speed of 3 s (from pH 4 to pH 7) and 7 s (from pH 7 to pH 10), a lower hysteresis voltage of 4.3 mV, and a smaller drift rate of 1.25 mV/h (at pH 7) compared with the ISHFET without passivation. In addition, the ISHFET with an Al 2 O 3 passivation layer exhibited significant surface potential variation and low degradation rate. These results suggest that the performance of ISHFET improved using USPD-grown Al 2 O 3 .
ISSN:1530-437X
1558-1748
DOI:10.1109/JSEN.2016.2531107