A Sub-150- BEOL-Embedded CMOS-MEMS Oscillator With a 138-dB Ultra-Low-Noise TIA

This letter presents the design of a low power, low phase noise monolithic oscillator with a back-end-of-line-embedded CMOS-MEMS resonator. The proposed CMOS-MEMS oscillator consists of a double-ended tuning fork resonator and a high gain (>138 dB[Formula Omitted] ultra-low input-referred current...

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Bibliographic Details
Published in:IEEE electron device letters 2016-05, Vol.37 (5), p.648-651
Main Authors: Li, Ming-Huang, Chen, Chao-Yu, Liu, Chun-You, Li, Sheng-Shian
Format: Article
Language:English
Subjects:
Digital broadcasting
Noise
Test methods
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Summary:This letter presents the design of a low power, low phase noise monolithic oscillator with a back-end-of-line-embedded CMOS-MEMS resonator. The proposed CMOS-MEMS oscillator consists of a double-ended tuning fork resonator and a high gain (>138 dB[Formula Omitted] ultra-low input-referred current noise ([Formula Omitted] integrator-differentiator transimpedance amplifier (TIA) with sub-150-[Formula Omitted] power consumption. The 1.2-MHz CMOS-MEMS oscillator prototype shows the phase noise better than -120 dBc/Hz at 1-kHz offset and -122 dBc/Hz at 10-kHz offset with moderate dc-bias ([Formula Omitted] V). The proposed oscillator can be operated with reduced MEMS dc bias ([Formula Omitted] V) and TIA power supply ([Formula Omitted] V, 65 [Formula Omitted]) while maintaining satisfactory performance. The frequency-power-normalized oscillator phase noise figure-of-merit (will be defined later) of 190 dB is achieved at 1-kHz offset with a resonator [Formula Omitted] of 1900, which is comparable with the state-of-the-art using bulk-mode resonators possessing [Formula Omitted] k.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2016.2538772