Silicon Photonics R&D and Manufacturing on 300-mm Wafer Platform

Industrial implementation of a silicon photonics platform using 300-mm SOI wafers and aiming at 100 Gb/s aggregate data-rate application is demonstrated. The integration strategy of electronic and photonic ICs, 300-mm process flow, and process variability are discussed, and performances of the passi...

Full description

Saved in:
Bibliographic Details
Published in:Journal of lightwave technology 2016-01, Vol.34 (2), p.286-295
Main Authors: Boeuf, Frederic, Cremer, Sebastien, Temporiti, Enrico, Fere, Massimo, Shaw, Mark, Baudot, Charles, Vulliet, Nathalie, Pinguet, Thierry, Mekis, Attila, Masini, Gianlorenzo, Petiton, Herve, Le Maitre, Patrick, Traldi, Matteo, Maggi, Luca
Format: Article
Language:English
Subjects:
Assembly
CMOS integrated circuits
optical communications
Optical fibers
optical transceivers
Silicon photonics
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Industrial implementation of a silicon photonics platform using 300-mm SOI wafers and aiming at 100 Gb/s aggregate data-rate application is demonstrated. The integration strategy of electronic and photonic ICs, 300-mm process flow, and process variability are discussed, and performances of the passive and active optical devices are shown. An example of a low-cost LGA-based package together with a fiber assembly is given. RX and TX circuits operating at 25 Gb/s are demonstrated. Finally, the process evolution toward the integration of the backside reflector and multiple silicon etching level is demonstrated.
ISSN:0733-8724
1558-2213
DOI:10.1109/JLT.2015.2481602