Investigation of Cycle-to-Cycle Variability in HfO2-Based OxRAM

This letter studies the intrinsic variability in oxide-based resistive RAM technology, highlighting the presence of a short range (≈40) correlation of resistances among cycles (for both low resistance state and high resistance state). Experimental results demonstrate the existence of a resistance co...

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Bibliographic Details
Published in:IEEE electron device letters 2016-06, Vol.37 (6), p.721-723
Main Authors: Piccolboni, Giuseppe, Molas, Gabriel, Garbin, Daniele, Vianello, Elisa, Cueto, Olga, Cagli, Carlo, Traore, Boubacar, De Salvo, Barbara, Ghibaudo, Gerard, Perniola, Luca
Format: Article
Language:English
Subjects:
Analytical models
Correlation
Distributed databases
Hafnium compounds
HfO2
OxRAM
Resistance
Tin
Variability
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Summary:This letter studies the intrinsic variability in oxide-based resistive RAM technology, highlighting the presence of a short range (≈40) correlation of resistances among cycles (for both low resistance state and high resistance state). Experimental results demonstrate the existence of a resistance correlation, and an analytical model is proposed in order to explain the findings. The presence of the correlation seems to indicate that the conductive filament, which is believed to be the basis of resistive RAM behavior, keeps for a limited number of cycling operations a memory of its morphology. The extension of this correlation depends on the programming conditions.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2016.2553370