Properties of Al-doped ZnO films grown by atmospheric pressure MOCVD on different orientation sapphire substrates

Al-doped ZnO films were grown on different orientation sapphire substrates (sapphire-R, C, M, A) at 400-600 °C via the atmospheric pressure aerosol-assisted MOCVD technique. The influence of deposition temperature and orientation of sapphire substrate on the microstructure, electrical and optical pr...

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Bibliographic Details
Published in:Integrated ferroelectrics 2016-07, Vol.173 (1), p.128-139
Main Authors: Kuprenaite, S., Abrutis, A., Plausinaitiene, V., Arkhangelskiy, A., Kubilius, V., Silimavicius, L., Murauskas, T., Saltyte, Z.
Format: Article
Language:English
Subjects:
Al-doping
Annealing
Atmospheric pressure
Barometric pressure
Deposition
Electric properties
Electrical properties
Ferroelectrics
MOCVD
Orientation
Sapphire
Substrates
Thin films
Zinc oxide
ZnO
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Summary:Al-doped ZnO films were grown on different orientation sapphire substrates (sapphire-R, C, M, A) at 400-600 °C via the atmospheric pressure aerosol-assisted MOCVD technique. The influence of deposition temperature and orientation of sapphire substrate on the microstructure, electrical and optical properties of ZnO-Al films was investigated. Epitaxial films grown on sapphire-R substrates exhibited the best electrical properties: carrier mobility was 50-60 cm 2 V −1 s −1 , resistivity
ISSN:1058-4587
1607-8489
DOI:10.1080/10584587.2016.1186440