Thickness-dependent electroforming behavior of ultra-thin Ta2O5 resistance switching layer

Electroforming behaviours of Ta2O5 resistance switching memory cell with a diameter of 28 nm and different thickness (0.5–2.0 nm) of Ta2O5 layer have been examined. The devices showed a constant forming electric field of 0.54 V/nm regardless of Ta2O5 thickness. The electroforming with negative bias...

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Published in:Physica status solidi. PSS-RRL. Rapid research letters 2015-06, Vol.9 (6), p.362-365
Main Authors: Park, Tae Hyung, Song, Seul Ji, Kim, Hae Jin, Kim, Soo Gil, Chung, Suock, Kim, Beom Yong, Lee, Kee Jeung, Kim, Kyung Min, Choi, Byung Joon, Hwang, Cheol Seong
Format: Article
Language:English
Subjects:
Electric fields
Electrodes
electroforming
Interfaces
oxygen vacancies
resistive switching memories
Ta2O5
thickness dependence
ultra-thin films
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Summary:Electroforming behaviours of Ta2O5 resistance switching memory cell with a diameter of 28 nm and different thickness (0.5–2.0 nm) of Ta2O5 layer have been examined. The devices showed a constant forming electric field of 0.54 V/nm regardless of Ta2O5 thickness. The electroforming with negative bias to top TiN electrode was ascribed to electric field‐ driven migration of oxygen vacancies, originally residing near the bottom interface, toward the top electrode interface and formation of conducting filaments. The estimated electroforming energy (0.094–0.14 eV) was favourably compared with the hopping energy of electrons from the VO site to a nearby Ta site. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim) Electroforming behaviors of Ta2O5 resistance switching memory cell with a diameter of 28 nm and different thickness (0.5–2.0 nm) of the Ta2O5 layer have been examined. The devices showed a constant forming electric field of 0.54 V/nm regardless of Ta2O5 thickness, which corresponds to an electroforming energy of 0.094–0.14 eV. This was favorably compared with the hopping energy of electrons from the oxygen vacancy (VO)‐site to a nearby Ta site.
ISSN:1862-6254
1862-6270
DOI:10.1002/pssr.201510110