3C-SiC Transistor With Ohmic Contacts Defined at Room Temperature

Among all SiC polytypes, only 3C-SiC has a cubic structure and can be hetero-epitaxial grown on large area Si substrate, thus providing an alternative choice for fabricating cheap wide bandgap power devices. Here, we present a low resistivity (~3 × 10 -5 Ω · cm 2 ) ohmic contact formed by directly d...

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Bibliographic Details
Published in:IEEE electron device letters 2016-09, Vol.37 (9), p.1189-1192
Main Authors: Fan Li, Sharma, Yogesh, Walker, David, Hindmarsh, Steven, Jennings, Mike, Martin, David, Fisher, Craig, Gammon, Peter, Perez-Tomas, Amador, Mawby, Phil
Format: Article
Language:English
Subjects:
3C-SiC
Annealing
channel mobility
Contact resistance
Devices
Electrical resistivity
Fabrication
Logic gates
Metals
MOSFET
MOSFETs
ohmic contact
Ohmic contacts
Polytypes
reliability
Silicon carbide
Silicon substrates
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Summary:Among all SiC polytypes, only 3C-SiC has a cubic structure and can be hetero-epitaxial grown on large area Si substrate, thus providing an alternative choice for fabricating cheap wide bandgap power devices. Here, we present a low resistivity (~3 × 10 -5 Ω · cm 2 ) ohmic contact formed by directly depositing a Ti/Ni metal stack on n-type 3C-SiC without any extra annealing. For the first time, 3C-SiC lateral MOSFETs with asdeposited ohmic contacts were fabricated, and it turned out not only the ohmic contact is free from any interface voids, but also a higher field-effect mobility value (~80 cm 2 /V · s) was achieved compared with the annealed devices.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2016.2593771