Effect of Oxygen Vacancy on Electrical Property of Acceptor Doped BaTiO3-Na0.5Bi0.5TiO3-Nb2O5 X8R Systems

In this study, we reported a new BaTiO3–Na0.5Bi0.5TiO3–Nb2O5–Mn2O3/Fe2O3/Co3O4/In2O3 X8R system with high dielectric constant (>2100) at room temperature. The impacts of oxygen vacancy (VO¨ ) on dielectric, electrical conductivity, and ferroelectric properties were systematically studied. The Cur...

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Bibliographic Details
Published in:Journal of the American Ceramic Society 2016-09, Vol.99 (9), p.3067-3073
Main Authors: Sun, Yue, Liu, Hanxing, Hao, Hua, Zhang, Shujun
Format: Article
Language:English
Subjects:
barium titanate
Conductivity
dielectric materials/properties
Dielectrics
Electric properties
multilayer capacitor
Online Access:Get full text
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Summary:In this study, we reported a new BaTiO3–Na0.5Bi0.5TiO3–Nb2O5–Mn2O3/Fe2O3/Co3O4/In2O3 X8R system with high dielectric constant (>2100) at room temperature. The impacts of oxygen vacancy (VO¨ ) on dielectric, electrical conductivity, and ferroelectric properties were systematically studied. The Curie point is largely depended on the VO¨ concentration, which can be confirmed by the dielectric behavior and A1g octahedral breathing modes in Raman spectrum. In addition, the activation energy of VO¨ diffusion is greatly reduced with the increase in VO¨ concentration. It was found that the remnant polarization and coercive field were both decreased with increasing VO¨ concentration, due to the facilitated defect dipoles reorientation and domain switching.
ISSN:0002-7820
1551-2916
DOI:10.1111/jace.14336