Analysis of Recombination in CdTe Heterostructures With Time-Resolved Two-Photon Excitation Microscopy

We used time-resolved photoluminescence micro-scopy to analyze charge carrier transport and recombination in CdTe double heterostructures fabricated by molecular beam epitaxy (MBE). This allowed us to determine the charge carrier mobility in this system, which was found to be 500-625 cm 2 /(V·s). Ch...

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Bibliographic Details
Published in:IEEE journal of photovoltaics 2016-11, Vol.6 (6), p.1581-1586
Main Authors: Kuciauskas, Darius, Wernsing, Keith, Jensen, Soren Alkaersig, Barnes, Teresa M., Myers, Thomas H., Bartels, Randy A.
Format: Article
Language:English
Subjects:
Cadmium compounds
Cadmium telluride
Charge carrier lifetime
II-VI semiconductor materials
MATERIALS SCIENCE
Photoluminescence
photoluminescence (PL)
photovoltaic (PV) device
Photovoltaic cells
PV device
Radiative recombination
recombination
SOLAR ENERGY
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Summary:We used time-resolved photoluminescence micro-scopy to analyze charge carrier transport and recombination in CdTe double heterostructures fabricated by molecular beam epitaxy (MBE). This allowed us to determine the charge carrier mobility in this system, which was found to be 500-625 cm 2 /(V·s). Charge carrier lifetimes in the 15-100 ns range are limited by the interface recombination, and the data indicate higher interface recombination velocity near extended defects. This study describes a new method to analyze the spatial distribution of the interface recombination velocity and the interface defects in semiconductor heterostructures.
ISSN:2156-3381
2156-3403
DOI:10.1109/JPHOTOV.2016.2600342