Analysis of Recombination in CdTe Heterostructures With Time-Resolved Two-Photon Excitation Microscopy

We used time-resolved photoluminescence micro-scopy to analyze charge carrier transport and recombination in CdTe double heterostructures fabricated by molecular beam epitaxy (MBE). This allowed us to determine the charge carrier mobility in this system, which was found to be 500-625 cm 2 /(V·s). Ch...

Full description

Saved in:
Bibliographic Details
Published in:IEEE journal of photovoltaics 2016-11, Vol.6 (6), p.1581-1586
Main Authors: Kuciauskas, Darius, Wernsing, Keith, Jensen, Soren Alkaersig, Barnes, Teresa M., Myers, Thomas H., Bartels, Randy A.
Format: Article
Language:English
Subjects:
Cadmium compounds
Cadmium telluride
Charge carrier lifetime
II-VI semiconductor materials
MATERIALS SCIENCE
Photoluminescence
photoluminescence (PL)
photovoltaic (PV) device
Photovoltaic cells
PV device
Radiative recombination
recombination
SOLAR ENERGY
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c442t-b51eee08a5cf591b54b6903a953af8253e00980e16efd93c81e4248d60b162813
cites cdi_FETCH-LOGICAL-c442t-b51eee08a5cf591b54b6903a953af8253e00980e16efd93c81e4248d60b162813
container_end_page 1586
container_issue 6
container_start_page 1581
container_title IEEE journal of photovoltaics
container_volume 6
creator Kuciauskas, Darius
Wernsing, Keith
Jensen, Soren Alkaersig
Barnes, Teresa M.
Myers, Thomas H.
Bartels, Randy A.
description We used time-resolved photoluminescence micro-scopy to analyze charge carrier transport and recombination in CdTe double heterostructures fabricated by molecular beam epitaxy (MBE). This allowed us to determine the charge carrier mobility in this system, which was found to be 500-625 cm 2 /(V·s). Charge carrier lifetimes in the 15-100 ns range are limited by the interface recombination, and the data indicate higher interface recombination velocity near extended defects. This study describes a new method to analyze the spatial distribution of the interface recombination velocity and the interface defects in semiconductor heterostructures.
doi_str_mv 10.1109/JPHOTOV.2016.2600342
format article
fullrecord <record><control><sourceid>proquest_osti_</sourceid><recordid>TN_cdi_proquest_journals_1831446966</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>7556291</ieee_id><sourcerecordid>4225518061</sourcerecordid><originalsourceid>FETCH-LOGICAL-c442t-b51eee08a5cf591b54b6903a953af8253e00980e16efd93c81e4248d60b162813</originalsourceid><addsrcrecordid>eNo9kE1PwkAQhhujiUT5BXpo9Fzc2S-6R0NUNBgIqXrctMs0LIEudheVf--SonOZObzPZOZJkmsgAwCi7l5m42kxfR9QAnJAJSGM05OkR0HIjHHCTv9mlsN50vd-RWJJIqTkvaS-b8r13lufujqdo3GbyjZlsK5JbZOOFgWmYwzYOh_anQm7Fn36YcMyLewGszl6t_7CRVp8u2y2dCFiDz_Ghm7DqzURNG67v0zO6nLtsX_sF8nb40MxGmeT6dPz6H6SGc5pyCoBiEjyUphaKKgEr6QirFSClXVOBUNCVE4QJNYLxUwOyCnPF5JUIGkO7CK56fbGe6328RI0S-OaBk3QwBhRfBhDt11o27rPHfqgV27XRg9eQ86Ac6mkjCnepQ4_-BZrvW3tpmz3Gog-mNdH8_pgXh_NR-yqw2z85B8ZCiGpAvYLBC5_mA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1831446966</pqid></control><display><type>article</type><title>Analysis of Recombination in CdTe Heterostructures With Time-Resolved Two-Photon Excitation Microscopy</title><source>IEEE Xplore (Online service)</source><creator>Kuciauskas, Darius ; Wernsing, Keith ; Jensen, Soren Alkaersig ; Barnes, Teresa M. ; Myers, Thomas H. ; Bartels, Randy A.</creator><creatorcontrib>Kuciauskas, Darius ; Wernsing, Keith ; Jensen, Soren Alkaersig ; Barnes, Teresa M. ; Myers, Thomas H. ; Bartels, Randy A. ; National Renewable Energy Lab. (NREL), Golden, CO (United States)</creatorcontrib><description>We used time-resolved photoluminescence micro-scopy to analyze charge carrier transport and recombination in CdTe double heterostructures fabricated by molecular beam epitaxy (MBE). This allowed us to determine the charge carrier mobility in this system, which was found to be 500-625 cm 2 /(V·s). Charge carrier lifetimes in the 15-100 ns range are limited by the interface recombination, and the data indicate higher interface recombination velocity near extended defects. This study describes a new method to analyze the spatial distribution of the interface recombination velocity and the interface defects in semiconductor heterostructures.</description><identifier>ISSN: 2156-3381</identifier><identifier>EISSN: 2156-3403</identifier><identifier>DOI: 10.1109/JPHOTOV.2016.2600342</identifier><identifier>CODEN: IJPEG8</identifier><language>eng</language><publisher>Piscataway: IEEE</publisher><subject>Cadmium compounds ; Cadmium telluride ; Charge carrier lifetime ; II-VI semiconductor materials ; MATERIALS SCIENCE ; Photoluminescence ; photoluminescence (PL) ; photovoltaic (PV) device ; Photovoltaic cells ; PV device ; Radiative recombination ; recombination ; SOLAR ENERGY</subject><ispartof>IEEE journal of photovoltaics, 2016-11, Vol.6 (6), p.1581-1586</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2016</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c442t-b51eee08a5cf591b54b6903a953af8253e00980e16efd93c81e4248d60b162813</citedby><cites>FETCH-LOGICAL-c442t-b51eee08a5cf591b54b6903a953af8253e00980e16efd93c81e4248d60b162813</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/7556291$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>230,314,780,784,885,27924,27925,54796</link.rule.ids><backlink>$$Uhttps://www.osti.gov/servlets/purl/1330947$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Kuciauskas, Darius</creatorcontrib><creatorcontrib>Wernsing, Keith</creatorcontrib><creatorcontrib>Jensen, Soren Alkaersig</creatorcontrib><creatorcontrib>Barnes, Teresa M.</creatorcontrib><creatorcontrib>Myers, Thomas H.</creatorcontrib><creatorcontrib>Bartels, Randy A.</creatorcontrib><creatorcontrib>National Renewable Energy Lab. (NREL), Golden, CO (United States)</creatorcontrib><title>Analysis of Recombination in CdTe Heterostructures With Time-Resolved Two-Photon Excitation Microscopy</title><title>IEEE journal of photovoltaics</title><addtitle>JPHOTOV</addtitle><description>We used time-resolved photoluminescence micro-scopy to analyze charge carrier transport and recombination in CdTe double heterostructures fabricated by molecular beam epitaxy (MBE). This allowed us to determine the charge carrier mobility in this system, which was found to be 500-625 cm 2 /(V·s). Charge carrier lifetimes in the 15-100 ns range are limited by the interface recombination, and the data indicate higher interface recombination velocity near extended defects. This study describes a new method to analyze the spatial distribution of the interface recombination velocity and the interface defects in semiconductor heterostructures.</description><subject>Cadmium compounds</subject><subject>Cadmium telluride</subject><subject>Charge carrier lifetime</subject><subject>II-VI semiconductor materials</subject><subject>MATERIALS SCIENCE</subject><subject>Photoluminescence</subject><subject>photoluminescence (PL)</subject><subject>photovoltaic (PV) device</subject><subject>Photovoltaic cells</subject><subject>PV device</subject><subject>Radiative recombination</subject><subject>recombination</subject><subject>SOLAR ENERGY</subject><issn>2156-3381</issn><issn>2156-3403</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNo9kE1PwkAQhhujiUT5BXpo9Fzc2S-6R0NUNBgIqXrctMs0LIEudheVf--SonOZObzPZOZJkmsgAwCi7l5m42kxfR9QAnJAJSGM05OkR0HIjHHCTv9mlsN50vd-RWJJIqTkvaS-b8r13lufujqdo3GbyjZlsK5JbZOOFgWmYwzYOh_anQm7Fn36YcMyLewGszl6t_7CRVp8u2y2dCFiDz_Ghm7DqzURNG67v0zO6nLtsX_sF8nb40MxGmeT6dPz6H6SGc5pyCoBiEjyUphaKKgEr6QirFSClXVOBUNCVE4QJNYLxUwOyCnPF5JUIGkO7CK56fbGe6328RI0S-OaBk3QwBhRfBhDt11o27rPHfqgV27XRg9eQ86Ac6mkjCnepQ4_-BZrvW3tpmz3Gog-mNdH8_pgXh_NR-yqw2z85B8ZCiGpAvYLBC5_mA</recordid><startdate>20161101</startdate><enddate>20161101</enddate><creator>Kuciauskas, Darius</creator><creator>Wernsing, Keith</creator><creator>Jensen, Soren Alkaersig</creator><creator>Barnes, Teresa M.</creator><creator>Myers, Thomas H.</creator><creator>Bartels, Randy A.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>OIOZB</scope><scope>OTOTI</scope></search><sort><creationdate>20161101</creationdate><title>Analysis of Recombination in CdTe Heterostructures With Time-Resolved Two-Photon Excitation Microscopy</title><author>Kuciauskas, Darius ; Wernsing, Keith ; Jensen, Soren Alkaersig ; Barnes, Teresa M. ; Myers, Thomas H. ; Bartels, Randy A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c442t-b51eee08a5cf591b54b6903a953af8253e00980e16efd93c81e4248d60b162813</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Cadmium compounds</topic><topic>Cadmium telluride</topic><topic>Charge carrier lifetime</topic><topic>II-VI semiconductor materials</topic><topic>MATERIALS SCIENCE</topic><topic>Photoluminescence</topic><topic>photoluminescence (PL)</topic><topic>photovoltaic (PV) device</topic><topic>Photovoltaic cells</topic><topic>PV device</topic><topic>Radiative recombination</topic><topic>recombination</topic><topic>SOLAR ENERGY</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kuciauskas, Darius</creatorcontrib><creatorcontrib>Wernsing, Keith</creatorcontrib><creatorcontrib>Jensen, Soren Alkaersig</creatorcontrib><creatorcontrib>Barnes, Teresa M.</creatorcontrib><creatorcontrib>Myers, Thomas H.</creatorcontrib><creatorcontrib>Bartels, Randy A.</creatorcontrib><creatorcontrib>National Renewable Energy Lab. (NREL), Golden, CO (United States)</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Xplore</collection><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV - Hybrid</collection><collection>OSTI.GOV</collection><jtitle>IEEE journal of photovoltaics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kuciauskas, Darius</au><au>Wernsing, Keith</au><au>Jensen, Soren Alkaersig</au><au>Barnes, Teresa M.</au><au>Myers, Thomas H.</au><au>Bartels, Randy A.</au><aucorp>National Renewable Energy Lab. (NREL), Golden, CO (United States)</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Analysis of Recombination in CdTe Heterostructures With Time-Resolved Two-Photon Excitation Microscopy</atitle><jtitle>IEEE journal of photovoltaics</jtitle><stitle>JPHOTOV</stitle><date>2016-11-01</date><risdate>2016</risdate><volume>6</volume><issue>6</issue><spage>1581</spage><epage>1586</epage><pages>1581-1586</pages><issn>2156-3381</issn><eissn>2156-3403</eissn><coden>IJPEG8</coden><abstract>We used time-resolved photoluminescence micro-scopy to analyze charge carrier transport and recombination in CdTe double heterostructures fabricated by molecular beam epitaxy (MBE). This allowed us to determine the charge carrier mobility in this system, which was found to be 500-625 cm 2 /(V·s). Charge carrier lifetimes in the 15-100 ns range are limited by the interface recombination, and the data indicate higher interface recombination velocity near extended defects. This study describes a new method to analyze the spatial distribution of the interface recombination velocity and the interface defects in semiconductor heterostructures.</abstract><cop>Piscataway</cop><pub>IEEE</pub><doi>10.1109/JPHOTOV.2016.2600342</doi><tpages>6</tpages><oa>free_for_read</oa></addata></record>
fulltext fulltext
identifier ISSN: 2156-3381
ispartof IEEE journal of photovoltaics, 2016-11, Vol.6 (6), p.1581-1586
issn 2156-3381
2156-3403
language eng
recordid cdi_proquest_journals_1831446966
source IEEE Xplore (Online service)
subjects Cadmium compounds
Cadmium telluride
Charge carrier lifetime
II-VI semiconductor materials
MATERIALS SCIENCE
Photoluminescence
photoluminescence (PL)
photovoltaic (PV) device
Photovoltaic cells
PV device
Radiative recombination
recombination
SOLAR ENERGY
title Analysis of Recombination in CdTe Heterostructures With Time-Resolved Two-Photon Excitation Microscopy
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-01T18%3A46%3A30IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Analysis%20of%20Recombination%20in%20CdTe%20Heterostructures%20With%20Time-Resolved%20Two-Photon%20Excitation%20Microscopy&rft.jtitle=IEEE%20journal%20of%20photovoltaics&rft.au=Kuciauskas,%20Darius&rft.aucorp=National%20Renewable%20Energy%20Lab.%20(NREL),%20Golden,%20CO%20(United%20States)&rft.date=2016-11-01&rft.volume=6&rft.issue=6&rft.spage=1581&rft.epage=1586&rft.pages=1581-1586&rft.issn=2156-3381&rft.eissn=2156-3403&rft.coden=IJPEG8&rft_id=info:doi/10.1109/JPHOTOV.2016.2600342&rft_dat=%3Cproquest_osti_%3E4225518061%3C/proquest_osti_%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c442t-b51eee08a5cf591b54b6903a953af8253e00980e16efd93c81e4248d60b162813%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=1831446966&rft_id=info:pmid/&rft_ieee_id=7556291&rfr_iscdi=true