Structure and dielectric property of CaTiSiO5 doped BST ceramics sintered at low temperature

Structure and dielectric property of CaTiSiO 5 doped (Ba, Sr)TiO 3 (barium strontium titanate, BST) capacitor ceramics were studied by means of X-ray diffraction(XRD),Scanning electron microscopy(SEM) and traditional solid sate sintered method. The results showed that dielectric loss of BST ceramics...

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Bibliographic Details
Published in:Ferroelectrics 2016-09, Vol.502 (1), p.43-48
Main Authors: Huang, Xinyou, Yin, Jia, Gao, Chunhua, Huang, Musheng, Yue, Zhenxing
Format: Article
Language:English
Subjects:
barium and strontium titanate
capacitor ceramics
CaTiSiO
Ceramics
Dielectric properties
doping
Sintering
Temperature
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Summary:Structure and dielectric property of CaTiSiO 5 doped (Ba, Sr)TiO 3 (barium strontium titanate, BST) capacitor ceramics were studied by means of X-ray diffraction(XRD),Scanning electron microscopy(SEM) and traditional solid sate sintered method. The results showed that dielectric loss of BST ceramics doped with CaTiSiO 5 had low value, moving effect and broadening effect of CaTiSiO 5 for curie peak of BST ceramics were obvious. Dielectric constant(ϵ r ) increased firstly and then decreased, dielectric loss (tanδ) increased firstly and then decreased, AC withstand voltage strength(E b ) increased firstly and then decreased, capacitance temperature changing rate(ΔC/C) decreased firstly and then increased in the negative temperature range and positive temperature range, when CaTiSiO 5 doping amount increased. The BST ceramics possessed good comprehensive property with ϵ r of 2540, tanδ of 0.0036, E b of 5.6 kV/mm(AC), ΔC/C of −18.9∼20.6% in the temperature range of −30°∼85°, the capacitance temperature characteristic was suited for Y5S, when CaTiSiO 5 doping amount was 0.8wt.%.
ISSN:0015-0193
1563-5112
DOI:10.1080/00150193.2016.1233021