LED Die-Bonded on the Ag/Cu Substrate by a Sn-BiZn-Sn Bonding System

In this study, light emitting diode (LED) chips were die-bonded on a Ag/Cu substrate by a Sn-BixZn-Sn bonding system. A high die-bonding strength is successfully achieved by using a Sn-BixZn-Sn ternary system. At the bonding interface, there is observed a Bi-segregation phenomenon. This Bi-segregati...

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Bibliographic Details
Published in:Journal of electronic materials 2016-12, Vol.45 (12), p.6171-6176
Main Authors: Tang, Y. K., Hsu, Y. C., Lin, E. J., Hu, Y. J., Liu, C. Y.
Format: Article
Language:English
Subjects:
Characterization and Evaluation of Materials
Chemistry and Materials Science
Die casting
Electronics and Microelectronics
Instrumentation
Lead free solders
Materials Science
Optical and Electronic Materials
Solid State Physics
Studies
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Summary:In this study, light emitting diode (LED) chips were die-bonded on a Ag/Cu substrate by a Sn-BixZn-Sn bonding system. A high die-bonding strength is successfully achieved by using a Sn-BixZn-Sn ternary system. At the bonding interface, there is observed a Bi-segregation phenomenon. This Bi-segregation phenomenon solves the problems of the brittle layer-type Bi at the joint interface. Our shear test results show that the bonding interface with Bi-segregation enhances the shear strength of the LED die-bonding joints. The Bi-0.3Zn and Bi-0.5Zn die-bonding cases have the best shear strength among all die-bonding systems. In addition, we investigate the atomic depth profile of the deposited Bi-xZn layer by evaporating Bi-xZn E-gun alloy sources. The initial Zn content of the deposited Bi-Zn alloy layers are much higher than the average Zn content in the deposited Bi-Zn layers.
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-016-4885-7