A Short Channel Double-Gate Junctionless Transistor Model Including the Dynamic Channel Boundary Effect

A new model to capture the physics of short channel double-gate junctionless transistor (DGJT) has been developed. By solving the 2-D Poisson's equation, the channel potential solution is obtained for both the physical channel and the dynamic channel extension to the source and drain. This dyna...

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Published in:IEEE transactions on electron devices 2016-12, Vol.63 (12), p.4661-4667
Main Authors: Xiao, Ying, Lin, Xinnan, Lou, Haijun, Zhang, Baili, Zhang, Lining, Chan, Mansun
Format: Article
Language:English
Subjects:
Compact model
Computer simulation
Depletion
dynamic channel boundary (DCB)
Electric potential
full range
junctionless transistor
Mathematical model
Mathematical models
Poisson equations
Semiconductor device modeling
short channel
Silicon
Transistors
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cited_by cdi_FETCH-LOGICAL-c291t-b9c12b404fad07b211faee087b47f4a8076c80658ff6a5c1a48db0fc8c0992c3
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container_end_page 4667
container_issue 12
container_start_page 4661
container_title IEEE transactions on electron devices
container_volume 63
creator Xiao, Ying
Lin, Xinnan
Lou, Haijun
Zhang, Baili
Zhang, Lining
Chan, Mansun
description A new model to capture the physics of short channel double-gate junctionless transistor (DGJT) has been developed. By solving the 2-D Poisson's equation, the channel potential solution is obtained for both the physical channel and the dynamic channel extension to the source and drain. This dynamic change in channel boundary in DGJT has a strong impact on the performance of junctionless transistor, especially at reduced channel length. Based on the channel potential solution, a smooth and continuous drain current model is derived from Pao-Sah's dual integral. This model is valid for all operation modes, including full depletion, partial depletion, and accumulation. Extensive comparison with numerical simulation has been performed to validate model in both the long channel and short channel regimes.
doi_str_mv 10.1109/TED.2016.2620240
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subjects Compact model
Computer simulation
Depletion
dynamic channel boundary (DCB)
Electric potential
full range
junctionless transistor
Mathematical model
Mathematical models
Poisson equations
Semiconductor device modeling
short channel
Silicon
Transistors
title A Short Channel Double-Gate Junctionless Transistor Model Including the Dynamic Channel Boundary Effect
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