Analysis and Compact Modeling of Negative Capacitance Transistor with High ON-Current and Negative Output Differential Resistance-Part I: Model Description

We present an accurate and computationally efficient physics-based compact model to quantitatively analyze negative capacitance FET (NCFET) for real circuit design applications. Our model is based on the Landau-Khalatnikov equation coupled to the standard BSIM6 MOSFET model and implemented in Verilo...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2016-12, Vol.63 (12), p.4981-4985
Main Authors: Pahwa, Girish, Dutta, Tapas, Agarwal, Amit, Khandelwal, Sourabh, Salahuddin, Sayeef, Chenming Hu, Chauhan, Yogesh Singh
Format: Article
Language:English
Subjects:
Analytical models
Capacitance
Circuit design
Compact modeling
ferroelectric
Ferroelectricity
Field effect transistors
Impact analysis
Mathematical model
MOSFET
MOSFETs
negative capacitance
negative capacitance FET (NCFET)
Semiconductor device modeling
Temperature effects
Transient analysis
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Description
Summary:We present an accurate and computationally efficient physics-based compact model to quantitatively analyze negative capacitance FET (NCFET) for real circuit design applications. Our model is based on the Landau-Khalatnikov equation coupled to the standard BSIM6 MOSFET model and implemented in Verilog-A. It includes transient and temperature effects, and accurately captures different aspects of NCFET. A comprehensive quasi-static analysis of NCFET in its different regions of operation is also performed using a simpler loadline approach. We also analyze the impact of ferroelectric and gate oxide thicknesses on the performance gain of NCFET over MOSFET.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2016.2614432