Improved Performance of Scaled-Down \alpha -InGaZnO Thin-Film Transistor by Ar Plasma Treatment

The origin of contact-resistance reduction induced by Ar plasma treatment and the effects of the treatment on the down-scaling of amorphous InGaZnO thin-film transistor are investigated. The treatment induces more TiO x and oxygen vacancies at the InGaZnO/Ti interface which facilitate electron flow...

Full description

Saved in:
Bibliographic Details
Published in:IEEE electron device letters 2016-12, Vol.37 (12), p.1574-1577
Main Authors: Huang, X. D., Song, J. Q., Lai, P. T.
Format: Article
Language:English
Subjects:
alpha -IGZO
Ar plasma treatment
Argon plasma
Contact resistance
down-scaling thin-film transistor (TFT)
Electrodes
Indium gallium zinc oxide
Logic gates
Object recognition
Performance evaluation
Plasmas
Reduction
Semiconductor devices
Thin film transistors
Titanium oxides
Transistors
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The origin of contact-resistance reduction induced by Ar plasma treatment and the effects of the treatment on the down-scaling of amorphous InGaZnO thin-film transistor are investigated. The treatment induces more TiO x and oxygen vacancies at the InGaZnO/Ti interface which facilitate electron flow between the InGaZnO film and source/drain (S/D) electrodes by trap-assisted tunneling, thus resulting in smaller width-normalized S/D contact resistance (R S /D norm = 19.9 Ω.cm) than that without Ar treatment (75.6 Ω.cm). Mainly owing to the reduction in RS/Dnorm, the Ar-treated device presents improved down-scaling behaviors than the untreated one. The Ar-treated device with a channel length of 5 μm still has good performance with a small sub-threshold swing of 252 mV/decade, a high field-effect mobility of 11.1 cm 2 /V.s, and a large ON-OFF current ratio of 1.7×10 7 .
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2016.2615879