Polarization Effect in AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes

The polarization effect in AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) is investigated, which is critical for the development of DUV LEDs, because the basal material, epitaxial structure, and polarization characteristics are very distinct to those of the well-developed (In)GaN-ba...

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Bibliographic Details
Published in:IEEE journal of quantum electronics 2017-02, Vol.53 (1), p.1-6
Main Authors: Kuo, Yen-Kuang, Chang, Jih-Yuan, Chang, Hui-Tzu, Chen, Fang-Ming, Shih, Ya-Hsuan, Liou, Bo-Ting
Format: Article
Language:English
Subjects:
Aluminum gallium nitride
Aluminum gallium nitrides
Charge carrier processes
Emitters (electron)
Interlayers
Light emitting diodes
Multi Quantum Wells
Performance evaluation
polarization
Polarization characteristics
quantum confined Stark effect
Quantum well devices
Quantum wells
Radiative recombination
Ultraviolet radiation
Wide band gap semiconductors
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Summary:The polarization effect in AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) is investigated, which is critical for the development of DUV LEDs, because the basal material, epitaxial structure, and polarization characteristics are very distinct to those of the well-developed (In)GaN-based near-ultraviolet and visible light emitters. In this paper, the influence of the polarization effect in multi-quantum well active region and p-type layers on the characteristics of DUV LEDs with Ga-face or N-face polarization is explored. Simulation results show that the severe band bending of the p-type layers induced by the polarization field markedly affects the optical and electrical performance. A band-engineered DUV LED structure with compositional grading electron-blocking layer and p-interlayer is proposed to enhance the electron confinement and hole injection with the mitigation of polarization effect. The device performance of the proposed LED structure with Ga-face or N-face polarization is comparable with that of the DUV LED without polarization.
ISSN:0018-9197
1558-1713
DOI:10.1109/JQE.2016.2643289