Investigation of Silicon Carbide Polytypes by Raman Spectroscopy

Polytypes of colourless and coloured single crystals of silicon carbide (SiC) grown on SiC substrates by chemical vapour deposition are studied using Raman spectroscopy supplemented by scanning electron microscopy (SEM) and X-ray diffraction (XRD) analyses. The SEM analysis of the defect stacking fa...

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Bibliographic Details
Published in:Latvian journal of physics and technical sciences 2014-06, Vol.51 (3), p.51-57
Main Authors: Chikvaidze, G., Mironova-Ulmane, N., Plaude, A., Sergeev, O.
Format: Article
Language:English
Subjects:
polytypes
Raman spectroscopy
Silicon carbide (SiC)
X-ray diffraction (XRD)
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Summary:Polytypes of colourless and coloured single crystals of silicon carbide (SiC) grown on SiC substrates by chemical vapour deposition are studied using Raman spectroscopy supplemented by scanning electron microscopy (SEM) and X-ray diffraction (XRD) analyses. The SEM analysis of the defect stacking faults, inclusions of defects and their distribution has shown that they correlate with the peak positions of the obtained Raman spectra and with the XRD data on the crystal structure Dažādu fāzu silīcija karbīda (SiC) monokristāli, kas audzēti uz SiC pamatnēm ar ķīmiskās nogulsnēšanas metodi no gāzveida fāzes, tika pētīti, izmantojot Ramana spektroskopiju, skenējošo elektronu mikroskopiju (SEM) un rentgenstaru difrakciju (XRD). Ar SEM palīdzību tika identificēti kristalogrāfiskās struktūras apgabali un ieslēgumi, ir pierādīts, ka tie korelē ar Ramana spektru pīķu pozīcijām, un XRD datiem par kristālisko struktūru
ISSN:0868-8257
2199-6156
0868-8257
DOI:10.2478/lpts-2014-0019