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Design and Performance of (Au,Yb)/ZnS/InSe/C Heterojunctions as Plasmon Resonators, Photodetectors and Microwave Cavities
In this study, we concentrate on the design and characterization of the hybrid isotype (Au, Yb)/ZnS/InSe/C devices. The thin film devices that are prepared by using the vacuum deposition technique are characterized by means of x-ray diffraction, energy dispersive x-ray analysis, optical and dielectr...
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Published in: | Journal of electronic materials 2017-03, Vol.46 (3), p.1650-1657 |
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Main Authors: | , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | In this study, we concentrate on the design and characterization of the hybrid isotype (Au, Yb)/ZnS/InSe/C devices. The thin film devices that are prepared by using the vacuum deposition technique are characterized by means of x-ray diffraction, energy dispersive x-ray analysis, optical and dielectric spectroscopy, current–voltage characteristics and impedance spectroscopy techniques. The techniques allow determining the preferred crystallinity at the interfaces, the lattice match/mismatch ratios, the atomic compositions, the energy band gap shifts, the valence and conduction band offsets, the barrier heights at the Schottky shoulders (Au/ZnS and InSe/C) of the hybrid structure and the plasmonic interaction at the ZnS/InSe and (Au, Yb)/ZnS/InSe interfaces. The hybrid isotype device is found to exhibit photosensing features presented by a responsivity of ∼2.0 A/W, external quantum efficiencies (EQE) and internal quantum efficiencies (IQE) of 395% and 2493%, at basing voltage of 0.3 V, respectively. In addition, the dielectric spectra modeling reveals a plasmon–electron interaction of resonance frequencies in the range of 0.31–5.26 GHz and drift mobility of ∼212 cm
2
/Vs and 106 cm
2
/Vs for the Au/ZnS/InSe and Yb/ZnS/InSe, respectively. Moreover, the impedance spectroscopy studies confirm the correctness of the dielectric modeling nominating the Yb/ZnS/InSe/C devices as photodetectors, plasmon resonators and microwave cavities. |
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ISSN: | 0361-5235 1543-186X |
DOI: | 10.1007/s11664-016-5208-8 |