(S)TEM Analysis of the Strain and Morphology of InAs Quantum Dots using GaAs(Sb)(N) Capping Layers for Solar Cell Applications

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Bibliographic Details
Published in:Microscopy and microanalysis 2016-03, Vol.22 (S4), p.46-47
Main Authors: Reyes, D. F., Utrilla, A. D., Ben, T., Saborido, J. J., Ulloa, J. M., Bárcena-Gonzálz, G., Guerrero-Lebrero, M. P., Guerrero, E., Gonzalez, D.
Format: Article
Language:English
Subjects:
Electrons
Material Sciences
Microscopy
Molecular beam epitaxy
Morphology
Quantum dots
Solar cells
Citations: Items that this one cites
Online Access:Get full text
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ISSN:1431-9276
1435-8115
DOI:10.1017/S1431927616000428