Study of GaN-Based LEDs With Hybrid SiO2 Microsphere/Nanosphere AntiReflection Coating as a Passivation Layer by a Rapid Convection Deposition

A hybrid SiO 2 micro/nanospheres antireflection coating, deposited by a rapid convection deposition, acting as a passivation layer of GaN-based light-emitting diodes (LEDs) is studied in this paper. Since the critical angle could be enlarged by antireflection coating, Fresnel reflection could be red...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2017-03, Vol.64 (3), p.1134-1139
Main Authors: Chi-Hsiang Hsu, Yi-Chun Chan, Wei-Cheng Chen, Ching-Hong Chang, Jian-Kai Liou, Shiou-Ying Cheng, Der-Feng Guo, Wen-Chau Liu
Format: Article
Language:English
Subjects:
Antireflection coating
Coatings
Gallium nitrides
GaN
Leakage current
Light emitting diodes
light-emitting diode (LED)
microsphere/nanosphere
Microspheres
Nanoparticles
Nanospheres
Passivation
rapid convection deposition (RCD)
Rough surfaces
Silicon dioxide
Surface roughness
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Summary:A hybrid SiO 2 micro/nanospheres antireflection coating, deposited by a rapid convection deposition, acting as a passivation layer of GaN-based light-emitting diodes (LEDs) is studied in this paper. Since the critical angle could be enlarged by antireflection coating, Fresnel reflection could be reduced. In addition, due to the roughened surface of hybrid SiO 2 microsphere/nanosphere antireflection coating, the scattering effect could be increased. Thus, the light extraction efficiency could be further enhanced. As compared with a conventional LED (device A), at 20 mA, the studied device C exhibits 18.7% enhancement in light output power without any degradation of electrical properties. Reduced leakage current could also be achieved. Therefore, the use of hybrid SiO 2 microsphere/nanosphere antireflection coating could effectively improve the performance of GaN-based LEDs.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2017.2657659