Using TCAD Modeling to Compare Heavy-Ion and Laser-Induced Single Event Transients in SiGe HBTs

Silicon-germanium heterojunction bipolar transistor (SiGe HBT) models are used in technology computer aided design (TCAD) to investigate single event transients induced by heavy-ion broadbeam and pulsed-laser two-photon absorption sources. A comparison between transient waveforms is provided, the pr...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2017-01, Vol.64 (1), p.398-405
Main Authors: Fleetwood, Zachary E., Lourenco, Nelson E., Ildefonso, Adrian, Warner, Jeffrey H., Wachter, Mason T., Hales, Joel M., Tzintzarov, George N., Roche, Nicolas J-H, Khachatrian, Ani, Buchner, Steven P., McMorrow, Dale, Paki, Pauline, Cressler, John D.
Format: Article
Language:English
Subjects:
Absorption
CAD
Computer aided design
Effective LET
Energy transfer
Germanium
heavy-ion
Heterojunction bipolar transistors
Oscilloscopes
pulsed-laser
SiGe HBT
Silicon
Silicon germanides
Silicon germanium
Simulation
single event effect
single event transient
technology computer aided design (TCAD)
Testing
Transient analysis
two-photon absorption
Xenon
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Summary:Silicon-germanium heterojunction bipolar transistor (SiGe HBT) models are used in technology computer aided design (TCAD) to investigate single event transients induced by heavy-ion broadbeam and pulsed-laser two-photon absorption sources. A comparison between transient waveforms is provided, the proper extraction of heavy-ion broadbeam transients is discussed (along with circuit implications), and basic laser strike profiles are implemented in TCAD to provide insight into future design practices for simulation software to be used to describe laser-induced upsets in terms of an effective linear energy transfer (LET).
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2016.2637322