Determination of the element distribution in films deposited using the plasma focus facility by Rutherford backscattering

• Published in: Surface investigation, x-ray, synchrotron and neutron techniques x-ray, synchrotron and neutron techniques, 2017, Vol.11 (1), p.63-68
• Main Authors: Kolokoltsev, V. N., Kulikauskas, V. S., Bondarenko, G. G., Eriskin, A. A., Nikulin, V. Ya, Silin, P. V.
• Format: Article
• Language: English
• Subjects: Backscattering; Chemistry and Materials Science; Deposition; Dielectric properties; Diffusion rate; Glass substrates; Kinetic energy; Materials Science; Penetration depth; Plasma; Plasma focus; Plasmas (physics); Surfaces and Interfaces; Thin Films
• ISSN: 1027-4510; 1819-7094
• DOI: 10.1134/S102745101701013X

The C, Cu and W element profiles in films deposited using a plasma focus facility are studied by the Rutherford backscattering of 2-MeV He + ions. The films are deposited onto glass substrates in Ar plasmaforming gas. The element profiles are found to depend significantly on the kinetic energy of particles. The penetration depth of particles with the velocity ~10 5 m/s is about 1.5 μm. The corresponding element profiles showing the distribution of elements over the thickness of the glass are non-linear. For each element, the maximum layer depth is observed under the glass surface. The formation of Cu, W and C layers under the glass surface and their overlapping is a feature of films deposited using the plasma focus facility. Such an arrangement of layers evidences the significant difference between this method of film deposition and conventional techniques at low rates of atom deposition, as well as diffusion-based methods. The obtained films are found to have dielectric properties.