Role of defects in one-step synthesis of Cu-doped ZnO nano-coatings by electrodeposition method with enhanced magnetic and electrical properties

• Published in: Applied physics. A, Materials science & processing Materials science & processing, 2017-04, Vol.123 (4), p.1-11, Article 250
• Main Authors: Niranjan, K., Dutta, Subhajit, Varghese, Soney, Ray, Ajoy Kumar, Barshilia, Harish C.
• Format: Article
• Language: English
• Subjects: Applied physics; Characterization and Evaluation of Materials; Coated electrodes; Condensed Matter Physics; Conduction bands; Copper; Diamagnetism; Dopants; Electrical properties; Electron transport; Ferromagnetism; Glass substrates; Interstitials; Machines; Magnetic moments; Magnetic properties; Manufacturing; Materials science; Nanotechnology; Optical and Electronic Materials; Optical properties; Oxidation; Photoelectrons; Photoluminescence; Physics; Physics and Astronomy; Processes; Space charge; Surfaces and Interfaces; Thin Films; Valence; Zinc oxide
• ISSN: 0947-8396; 1432-0630
• DOI: 10.1007/s00339-017-0890-9

We report the growth of flower-like ferromagnetic Cu-doped ZnO (CZO) nanostructures using electrochemical deposition on FTO-coated glass substrates. X-ray photoelectron spectroscopy studies affirmed the presence of Cu in ZnO with an oxidation state of 2+. In order to find the optimized dopant concentration, different Cu dopant concentrations of 0.28, 0.30, 0.32, 0.35, 0.38, and 0.40 mM are applied and their magnetic, optical, and electrical properties are studied. Magnetic moment increased with the increasing dopant concentration up to 0.35 mM and then decreased with further increase in the concentration. Diamagnetic pure ZnO showed ferromagnetic nature even with a low doping concentration of 0.28 mM. Band gap increased with the increasing Cu concentration until a value of 0.35 mM and then remained the same for the higher dopant concentrations. It is ascribed to the Burstein–Moss effect. Defect-related broad photoluminescence (PL) peak is observed for the pure ZnO in the visible range. In contrast, Cu-doped samples showed a sharp and intense PL peak at 426 nm due to increased Zn interstitials. Kelvin probe measurements revealed that the Fermi level shifts toward the conduction band for the Cu-doped samples with respect to pure material. Electron transport mechanism in the samples is observed to be dominated by space charge-limited current and Schottky behavior with improved ideality factor up to 0.38 mM Cu.