Preparation of silicon carbide-supported vanadium oxide and its application of removing NO by ammonia

• Published in: Applied physics. A, Materials science & processing Materials science & processing, 2017-03, Vol.123 (3), p.1-8, Article 163
• Main Authors: Wang, Zi-Bo, Xu, Xu, Bai, Shu-Li, Guan, Yu-Jiang, Jiang, Sheng-Tao
• Format: Article
• Language: English
• Subjects: Ammonia; Applied physics; Catalysts; Characterization and Evaluation of Materials; Chemical reduction; Condensed Matter Physics; Machines; Manufacturing; Materials science; Materials selection; Nanotechnology; Optical and Electronic Materials; Photoelectrons; Physics; Physics and Astronomy; Processes; Reaction kinetics; Selective catalytic reduction; Silicon carbide; Surfaces and Interfaces; Thin Films; Vanadium oxides; Vanadium pentoxide
• ISSN: 0947-8396; 1432-0630
• DOI: 10.1007/s00339-017-0775-y

The aim of this work was to study the preparation of SiC-supported V 2 O 5 catalysts and the kinetics on selective catalytic reduction for NO with NH 3 on the catalysts. Using incipient wetness impregnation methods, vanadium oxide was applied to silicon carbide to prepare a SiC-supported vanadium oxide. X-ray photoelectron spectroscopy analysis confirmed that V 2 O 5 existed in the prepared materials. Using the prepared materials as catalysts, selective catalytic reduction for NO by NH 3 has been analyzed, and reaction kinetics on the catalysts was studied at 150–300 °C. The obtained results showed that the reduction reaction on the catalysts is close to zero-order kinetics with respect to NH 3 , first-order with respect to NO, and half-order to O 2 . Apparent activation energy for the reduction reaction was found to be 38 kJ mol −1 . The prepared materials are stable and reusable.