Analysis of the impact of non-1D effects on the gate switch-on current in 4H-SiC thyristors

The impact of non-1D effects caused by the spread of the gate current in the base layer on the gate switch-on current in 4 H -SiC thyristors is considered. It is shown that a new switching mechanism implemented in 4 H -SiC thyristors results in the dependence of the gate switch-on current on the thy...

Full description

Saved in:
Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2017-02, Vol.51 (2), p.225-231
Main Authors: Yurkov, S. N., Mnatsakanov, T. T., Levinshtein, M. E., Tandoev, A. G., Palmour, J. W.
Format: Article
Language:English
Subjects:
Analysis
Impact analysis
Lasers
Magnetic Materials
Magnetism
Physics
Physics and Astronomy
Physics of Semiconductor Devices
Silicon carbide
Silicon carbides
Technology application
Thyristors
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The impact of non-1D effects caused by the spread of the gate current in the base layer on the gate switch-on current in 4 H -SiC thyristors is considered. It is shown that a new switching mechanism implemented in 4 H -SiC thyristors results in the dependence of the gate switch-on current on the thyristor parameters, with this dependence being fundamentally different from that in conventional silicon thyristors.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782617020257