Temperature-dependent resonant tunneling in disordered quasi-one-dimensional N–I–N junctions

Formulas are obtained for the current–voltage characteristics and conductance of a quasi-one-dimensional N – I – N junction (where N is an ordinary metal and I is an insulator) with quantum resonance percolation trajectories (QRPTs) in a disordered I -layer at temperatures T > 0 K and the energy...

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Bibliographic Details
Published in:Bulletin of the Russian Academy of Sciences. Physics 2016-11, Vol.80 (11), p.1326-1328
Main Authors: Kirpichenkov, V. Ya, Kirpichenkova, N. V., Lozin, O. I., Postnikov, A. A.
Format: Article
Language:English
Subjects:
Current voltage characteristics
Disorder
Hadrons
Heavy Ions
Impurities
Nuclear Physics
Physics
Physics and Astronomy
Proceedings of the International Symposium “Ordering in Minerals and Alloys” OMA-18 and Chairman of the Organizing Committee of the International Symposium “Order
Resistance
Resonant tunneling
Semiconductor junctions
Temperature dependence
the Properties of Oxides” ODPO-18
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Summary:Formulas are obtained for the current–voltage characteristics and conductance of a quasi-one-dimensional N – I – N junction (where N is an ordinary metal and I is an insulator) with quantum resonance percolation trajectories (QRPTs) in a disordered I -layer at temperatures T > 0 K and the energy of local single-impurity electron level being equal to the Fermi energy ε 0 = ε F . Under these conditions, the impact QRPTs have on the current through the junctions weakens as the temperature grows, and the conductance drops; this is in contrast to the rise in conductance of an empty junction (with no impurities in the I -layer).
ISSN:1062-8738
1934-9432
DOI:10.3103/S1062873816110228